MIXA30W1200TML Six-Pack V = 1200 V CES I = 43 A C25 XPT IGBT V = 1.8 V CE(sat) Part name (Marking on product) MIXA30W1200TML 10, 23 18 22 14 8 17 21 13 11, 12 NTC 15, 16 19, 20 E72873 Pin configuration see outlines. 7 6 4 2 5 3 1 9, 24 Features: Application: Package: High level of integration AC motor drives E1 package Rugged XPT design Pumps, Fans Assembly height is 17.1 mm (Xtreme light Punch Through) results in: Washing machines Insulated base plate - short circuit rated for 10 sec. Air-conditioning system Pins suitable for wave soldering and - very low gate charge Inverter and power supplies PCB mounting - square RBSOA 3x I UL registered E72873 C - low EMI Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) Temperature sense included SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, test conditions and dimensions. 20110118b 2011 IXYS All rights reserved 1 - 6MIXA30W1200TML Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 43 A C25 C I T = 80C 30 A C80 C total power dissipation P T = 25C 150 W tot C collector emitter saturation voltage V I = 25 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 125C 2.1 V VJ gate emitter threshold voltage V I = 1 mA V = V T = 25C 5.4 5.9 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.02 0.15 mA CES CE CES GE VJ T = 125C 0.3 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 600 V V = 15 V I = 25 A 76 nC G(on) CE GE C turn-on delay time t 70 ns d(on) t current rise time 40 ns r inductive load T = 125C VJ t turn-off delay time 250 ns d(off) V = 600 V I = 25 A CE C current fall time t 100 ns f V = 15 V R = 39 W GE G turn-on energy per pulse E 2.5 mJ on turn-off energy per pulse E 3.0 mJ off reverse bias safe operating area RBSOA V = 15 V R = 39 W V = 1200 V 75 A GE G CEK T = 125C VJ I short circuit safe operating area V = 900 V V = 15 V T = 125C 100 A SC CE GE VJ (SCSOA) R = 39 W t = 10 s non-repetitive G p thermal resistance junction to case R (per IGBT) 0.84 K/W thJC thermal resistance case to heatsink R 0.24 K/W thCH Diode D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit V max. repetitve reverse voltage T = 25C 1200 V RRM VJ I forward current T = 25C 44 A F25 C I T = 80C 29 A F80 C forward voltage V I = 30 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.95 V VJ reverse recovery charge Q 3.5 C rr V = 600 V R max. reverse recovery current I 30 A RM di /dt = -600 A/s T = 125C F VJ reverse recovery time t 350 ns rr I = 30 A V = 0 V F GE E reverse recovery energy 0.9 mJ rec R thermal resistance junction to case (per diode) 1.2 K/W thJC thermal resistance case to heatsink R 0.4 K/W thCH IXYS reserves the right to change limits, test conditions and dimensions. 20110118b 2011 IXYS All rights reserved 2 - 6