Product Information

MIXA40WB1200TED

MIXA40WB1200TED electronic component of IXYS

Datasheet
IXYS IGBT Modules Converter-Brake Inverter Module
Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 94.094 ea
Line Total: USD 94.09

5 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 56.5607
5 : USD 54.8796
10 : USD 52.8703
25 : USD 51.1096
50 : USD 50.3635
100 : USD 50.3635
250 : USD 50.3635
500 : USD 47.817
1000 : USD 46.494

0 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 92.365

Read More Specifications

     
Manufacturer
Product Category
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Series
Brand
Maximum Gate Emitter Voltage
Factory Pack Quantity :
Tradename
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

MIXA40WB1200TED Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module V = 1600 V V = 1200 V V = 1200 V RRM CES CES I = 105 A I = 28 A I = 60 A DAVM C25 C25 XPT IGBT I = 320 A V = 1.8 V V = 1.8 V FSM CE(sat) CE(sat) Part name (Marking on product) MIXA40WB1200TED 21 22 D11 D13 D15 D7 D1 D5 D3 16 18 20 T1 T3 T5 NTC 8 7 15 17 19 1 2 3 6 5 4 D2 D6 D12 D14 D16 D4 14 11 12 13 T7 T2 T4 T6 9 E 72873 10 Pin configuration see outlines. 23 24 Features: Application: Package: Easy paralleling due to the positive AC motor drives E2-Pac standard outline temperature coefficient of the on-state Solar inverter Insulated copper base plate voltage Medical equipment Soldering pins for PCB mounting Rugged XPT design Uninterruptible power supply Temperature sense included (Xtreme light Punch Through) results in: Air-conditioning systems - short circuit rated for 10 sec. Welding equipment - very low gate charge Switched-mode and - square RBSOA 3x I resonant-mode power supplies C - low EMI Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, test conditions and dimensions. 20110916e 2011 IXYS All rights reserved 1 - 8MIXA40WB1200TED Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 60 A C25 C I T = 80C 40 A C80 C total power dissipation P T = 25C 195 W tot C collector emitter saturation voltage V I = 35 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 125C 2.1 V VJ gate emitter threshold voltage V I = 1.5 mA V = V T = 25C 5.4 6.0 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 2.1 mA CES CE CES GE VJ T = 125C 0.2 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 600 V V = 15 V I = 35 A 106 nC G(on) CE GE C t turn-on delay time 70 ns d(on) t current rise time 40 ns r inductive load T = 125C VJ turn-off delay time t 250 ns d(off) V = 600 V I = 35 A CE C current fall time t 100 ns f V = 15 V R = 27 W GE G turn-on energy per pulse E 3.8 mJ on E turn-off energy per pulse 4.1 mJ off RBSOA reverse bias safe operating area V = 15 V R = 27 W T = 125C GE G VJ V = 1200 V 105 A CEK short circuit safe operating area SCSOA short circuit duration t V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ short circuit current I R = 27 W non-repetitive 140 A SC G thermal resistance junction to case R (per IGBT) 0.64 K/W thJC Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 44 A F25 C I T = 80C 29 A F80 C forward voltage V I = 30 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.95 V VJ reverse recovery charge Q 3.5 C rr V = 600 V R max. reverse recovery current I 30 A RM di /dt = -600 A/s T = 125C F VJ t reverse recovery time 350 ns rr I = 30 A V = 0 V F GE reverse recovery energy E 0.9 mJ rec thermal resistance junction to case R (per diode) 1.2 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20110916e 2011 IXYS All rights reserved 2 - 8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

IXYS may also be referenced as

CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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