MIXG240RF1200PTED IXYS

MIXG240RF1200PTED electronic component of IXYS
MIXG240RF1200PTED IXYS
MIXG240RF1200PTED IGBT Modules
MIXG240RF1200PTED  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MIXG240RF1200PTED IGBT Modules across the USA, India, Europe, Australia, and various other global locations. MIXG240RF1200PTED IGBT Modules are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. MIXG240RF1200PTED
Manufacturer: IXYS
Category: IGBT Modules
Description: IGBT Modules IGBT MODULE - BRAKE E2-PACK-PF
Datasheet:
Price (USD)
1: USD 68.7417 ea
Line Total: USD 68.74 
Availability : 0
  
QtyUnit Price
1$ 68.7417

Availability 0
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 68.7417

   
Manufacturer
Product Category
Product
Configuration
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MIXG240RF1200PTED from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MIXG240RF1200PTED and other electronic components in the IGBT Modules category and beyond.

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The IXYS MIXG240RF1200PTED is an Insulated Gate Bipolar Transistor (IGBT) module designed for braking applications. It features a compact, U-frame package that is mechanically isolated from the baseplate by a molded plastic base to reduce thermal resistance. The package includes two Power-FREDTM (field-reversed in time diode) and two Fast IGBTs.The Power-FREDTM technology features optimally matched diodes rated for handling high-current/high-voltages, making it suitable for inverter applications. Its fast IGBTs feature a short reverse recovery time and low loss characteristics for improved efficiency. They are rated for a maximum collector current of 1200A, making them suitable for higher voltage applications. The module includes a dual integral baseplate and can be mounted on specified heatsinks. This improves thermal management and ensures reliable operation in high-power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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