MKI50-06A7 IXYS

MKI 50-06 A7 MKI 50-06 A7T I = 72 A C25 IGBT Modules V = 600 V CES H-Bridge V = 1.9 V CE(sat) typ. Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MKI 50-06A7 MKI 50-06A7T (with NTC) 13 T1 T5 D1 D5 1 9 T 2 10 16 14 T2 T6 D2 D6 T 3 11 4 12 17 Features: Application: Package: NPT IGBT technology Motor control Industry standard E2-pack Low saturation voltage - DC motor armature winding Designed for wave soldering Low switching losses - DC motor excitation winding With copper base plate Square RBSOA, no latch up - synchronous motor excitation winding Space savings High short circuit capability Supply of transformer primary winding Positive temperature coefficient - power supplies for easy parallelling - welding MOS input, voltage controlled - X-ray Ultra fast free wheeling diodes - UPS Solderable pins for PCB mounting - battery charger Reduced protection circuits IXYS reserves the right to change limits, test conditions and dimensions. 20130610b 2013 IXYS All rights reserved 1 - 6 PHASE-OUTMKI 50-06 A7 MKI 50-06 A7T IGBTs Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C to 150C 600 V CES VJ max. DC gate voltage V continuous 20 V GES collector current I T = 25C 72 A C25 C I T = 80C 50 A C80 C total power dissipation P T = 25C 225 W tot C collector emitter saturation voltage V I = 50 A V = 15 V T = 25C 1.9 2.4 V CE(sat) C GE VJ T = 125C 2.2 V VJ V gate emitter threshold voltage I = 1 mA V = V T = 25C 4.5 6.5 V GE(th) C GE CE VJ I collector emitter leakage current V = V V = 0 V T = 25C 0.6 mA CES CE CES GE VJ T = 125C 0.7 0.03 mA VJ gate emitter leakage current I V = 0 V V = 20 V 200 nA GES CE GE input capacitance C V = 25 V V = 0 V f = 1 MHz 2800 pF ies CE GE total gate charge Q V = 300 V V = 15 V I = 50 A 120 nC G(on) CE GE C turn-on delay time t 50 ns d(on) current rise time t 60 ns r inductive load T = 125C VJ turn-off delay time t 300 ns d(off) V = 300 V I = 50 A CE C current fall time t 30 ns f V = 15 V R = 22 W GE G E turn-on energy per pulse 2.3 mJ on turn-off energy per pulse E 1.7 mJ off reverse bias safe operating area I RBSOA V = 15 V R = 22 W L = 100 H 100 A CM GE G V clamped inductive load T = 125C <V CEK VJ CES short circuit safe operating area t V = 600 V V = 15 V T = 125C 10 s SC CE GE VJ (SCSOA) R = 22 W non-repetitive G thermal resistance junction to case R (per IGBT) 0.55 K/W thJC Diodes Definitions Conditions Symbol Maximum Ratings V max. repetitive reverse voltage 600 V RRM I forward current T = 25C 72 A F25 C I T = 80C 45 A F80 C Symbol Conditions Characteristic Values min. typ. max. V forward voltage I = 50 A T = 25C 1.6 1.8 V F F VJ T = 125C 1.3 V VJ max. reverse recovery current I V = 300 V I = 30 A 25 A RM R F reverse recovery time t di /dt = -500 A/s T = 125C 90 ns rr F VJ thermal resistance junction to case R (per diode) T = 25C 1.19 K/W thJC VJ IXYS reserves the right to change limits, test conditions and dimensions. 20130610b 2013 IXYS All rights reserved 2 - 6 PHASE-OUT