MMIX1X100N60B3H1 IXYS

MMIX1X100N60B3H1 electronic component of IXYS Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMIX1X100N60B3H1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. MMIX1X100N60B3H1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. MMIX1X100N60B3H1
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors DISC IGBT SMPD PKG-STANDARD
Datasheet: MMIX1X100N60B3H1 Datasheet (PDF)
Price (USD)
1: USD 30.0423 ea
Line Total: USD 30.04 
Availability : 0
  
QtyUnit Price
1$ 30.0423
2$ 28.4004

Availability 0
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 30.0423
2$ 28.4004

   
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We are delighted to provide the MMIX1X100N60B3H1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMIX1X100N60B3H1 and other electronic components in the IGBT Transistors category and beyond.

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The MMIX1X100N60B3H1 is a Discrete IGBT (Insulated Gate Bipolar Transistor) that is manufactured by IXYS. It has a standard SMPD (Surface Mount Power Device) package, and is rated for a maximum drain current of 100A at a maximum voltage of 600V. This IGBT has a turn-on/turn-off time of 3ns and a critical dV/dt rate of 10V/ns. This device features low saturation voltage (1.7V at 25A), low gate charge (15nC), and low gate drive power (~4mA @25°C). It is suitable for applications such as motor control, UPS, high frequency power supplies, inverters, and switch-mode power supplies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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