th Date: - 5 Sept 2018 Data Sheet Issue: - 4 Phase Control Thyristor Types N0910LC260 and N0910LC280 Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 2600-2800 V DRM V 2600-2800 DSM Non-repetitive peak off-state voltage, (note 1) V V 2600-2800 RRM Repetitive peak reverse voltage, (note 1) V V Non-repetitive peak reverse voltage, (note 1) 2700-2900 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS I Maximum average on-state current, T =55C, (note 2) T(AVM) sink 910 A I Maximum average on-state current. T =85C, (note 2) T(AVM) sink 630 A I Maximum average on-state current. T =85C, (note 3) T(AVM) sink 386 A I Nominal RMS on-state current, T =25C, (note 2) T(RMS) sink 1788 A I D.C. on-state current, T =25C, (note 4) T(d.c.) sink 1569 A I Peak non-repetitive surge t =10ms, V =0.6V , (note 5) 9.2 kA TSM p rm RRM I Peak non-repetitive surge t =10ms, V 10V, (note 5) 10.1 kA TSM2 p rm 3 2 2 2 I t I t capacity for fusing t =10ms, V =0.6V , (note 5) 42310 A s p rm RRM 3 2 2 2 I t I t capacity for fusing t =10ms, V 10V, (note 5) 51010 A s p rm Critical rate of rise of on-state current (repetitive), (Note 6) 300 A/s (di/dt) cr Critical rate of rise of on-state current (non-repetitive), (Note 6) 600 A/s V Peak reverse gate voltage 10 V RGM P Mean forward gate power 4 W G(AV) 30 P Peak forward gate power W GM T Operating temperature range -40 to +125 C S T Storage temperature range -40 to +150 C stg Notes:- 1) De-rating factor of 0.13% per C is applicable for T below 25C. j 2) Double side cooled, single phase 50Hz, 180 half-sinewave. 3) Single side cooled, single phase 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125C T initial. j 6) V =67% V , I =2A, t0.5s, T =125C. D DRM FG r case Data Sheet. Types N0910LC260 and N0910LC280 Issue 4 Page 1 of 11 September 2018 Phase Control Thyristor Types N0910LC260 and N0910LC280 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V Maximum peak on-state voltage - - 2.07 I =1700A V TM TM V Threshold voltage - - 1.04 V T0 r Slope resistance - - 0.606 T mW (dv/dt) Critical rate of rise of off-state voltage 1000 - - V =80% V , linear ramp, gate o/c V/s cr D DRM I Peak off-state current - - 60 Rated V mA DRM DRM I Peak reverse current - - 60 Rated V mA RRM RRM V Gate trigger voltage - - 3.0 V GT T =25C V =10V, I =3A j D T I Gate trigger current - - 300 mA GT V Gate non-trigger voltage - - 0.25 Rated V V GD DRM I Holding current - - 1000 T =25C mA H j t Gate-controlled turn-on delay time 0.5 1.0 s gd V =67% V , I =1000A, di/dt=10A/s, D DRM T I =2A, t =0.5s, T =25C FG r j tgt Turn-on time - 1.0 2.0 s Q Recovered charge - 2400 - C rr Q Recovered charge, 50% Chord - 1250 1500 C ra I =1000A, t =1000s, di/dt=10A/s, TM p V =50V r I Reverse recovery current - 100 - A rr t Reverse recovery time - 25.0 - s rr I =1000A, t =1000s, di/dt=10A/s, TM p - 600 - V =50V, V =80%V , dV /dt=20V/s r dr DRM dr t Turn-off time s q I =1000A, t =1000s, di/dt=10A/s, TM p - 1000 - V =50V, V =80%V , dV /dt=200V/s r dr DRM dr - - 0.032 Double side cooled K/W R Thermal resistance, junction to heatsink thJK - - 0.064 Single side cooled K/W F Mounting force 10 - 20 kN W Weight - 340 - g t Notes:- 1) Unless otherwise indicated Tj=125C. Data Sheet. Types N0910LC260 and N0910LC280 Issue 4 Page 2 of 11 September 2018