VBE 100-12NO7 I = 100 A dAV Single Phase Rectifier Bridge V = 1200 V RRM with Fast Recovery Epitaxial Diodes (FRED) t = 40 ns rr in ECO-PAC 2 V V PS16 Type RSM RRM V V VBE 100-12NO7 1200 1200 ~ L 9 ~ K 10 EG 1 Features Symbol Conditions Maximum Ratings Package with DCB ceramic I j 100 A dAV T = 70C, module C base plate in low profile I 100 A dAVM Isolation voltage 3000 V~ I T = 45C t = 10 ms (50 Hz) 500 A FSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz) 525 A R Low forward voltage drop Leads suitable for PC board solder ing T = T t = 10 ms (50 Hz) 415 A VJ VJM V = 0 t = 8.3 ms (60 Hz) 440 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz) 1250 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 1160 A s Supplies for DC power equipment R Input and output rectifiers for high 2 T = T t = 10 ms (50 Hz) 860 A s VJ VJM frequency 2 V = 0 t = 8.3 ms (60 Hz) 820 A s R Batter y DC power supplies T -40...+150 C VJ Field supply for DC motors T 150 C VJM T -40...+125 C stg Advantages V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Space and weight savings I < 1 mA t = 1 s 3600 V~ ISOL Improved temperature and power cycling capability M Mounting torque (M4) 1.5-2 Nm d Small and light weight Weight Typ. 24 g Low noise switching Symbol Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394) I V = V T = 25C 1 mA R R RRM VJ T = T 2.5 mA VJ VJM V I = 60 A T = 25C 2.7 V F F VJ V For power-loss calculations only 1.07 V T0 r 8.2 mW t R per diode DC current 0.8 K/W thJC R per diode DC current 0.2 K/W thCH I I = 130 A -di /dt - 100 A/s typ. 7 A RM F F V = 100 V T = 100C max. 1.5 A R VJ t I = 1 A -di /dt - 300 A/s typ. 40 ns rr F F V = 30 V T = 25C R VJ d Creeping distance on surface 11.2 mm S d Creepage distance in air 9.7 mm A 2 a Max. allowable acceleration 50 m/s Data according to IEC 60747 and refer to a single diode unless otherwise stated. j for resistive load a br idge output. IXYS reserves the right to change limits, test conditions and dimensions. 20081117a IXYS All rights reserved 1 - 2VBE 100-12NO7 Fig. 1 Forward current Fig. 2 Reverse recover y charge Fig. 3 Peak reverse current I versus V Q versus -di /dt I versus -di /dt F F r F RM F Fig. 5 Recover y time Fig. 6 Peak forward voltage Fig. 4 Dynamic parameters trr versus -di /dt V and tfr versus di /dt Q , I versus T r RM VJ F FR F Fig. 7 Typical transient ther mal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 20081117a IXYS All rights reserved 2 - 2