VBE 26-12NO7 TM I = 32 A ECO-PAC dAV V = 1200 V RRM Single Phase Rectifier Bridge t = 40 ns rr D V V Typ RSM RRM V V A N 1200 1200 VBE 26-12NO7 K Symbol Conditions Maximum Ratings Features Package with DCB ceramic I T = 85C, module 32 A dAV C base plate in low profile I 90 A dAVM Isolation voltage 3000 V~ I T = 45C t = 10 ms (50 Hz), sine 90 A FSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 100 A R Low forward voltage drop Leads suitable for PC board soldering T = T t = 10 ms (50 Hz), sine 75 A VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 85 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 40 A s VJ Supplies for DC power equipment 2 V = 0 t = 8.3 ms (60 Hz), sine 40 A s R Input and output rectifiers for high 2 frequency T = T t = 10 ms (50 Hz), sine 30 A s VJ VJM 2 Battery DC power supplies V = 0 t = 8.3 ms (60 Hz), sine 30 A s R Field supply for DC motors T -40...+150 C VJ T 150 C VJM Advantages T -40...+125 C stg Space and weight savings V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Improved temperature and power I 1 mA t = 1 s 3600 V~ ISOL cycling capability Small and light weight M Mounting torque (M4) 1.5-2/14-18 Nm/lb.in. d Low noise switching Weight typ. 19 g Dimensions in mm (1 mm = 0.0394 ) Symbol Conditions Characteristic Values typ. max. I V = V T = 25C 0.1 mA R R RRM VJ V = V T = T 0.5 mA R RRM VJ VJM V I = 15 A T = 25C 2.73 V F F VJ V for power-loss calculations only 1.32 V T0 r 30 m T R per diode DC current 1.6 K/W thJC R per diode, DC current, typ. 0.3 K/W thCH I I = 25 A, -diF/dt = 100 A/s 5 9.7 A RM F V = 100 V, L = 0.05 mH, T = 100C R VJ t I = 1 A -di/dt = 100 A/s V = 30 V, T = 25C 40 tbd ns rr F R VJ 2 a Max. allowable acceleration 50 m/s d creeping distance on surface 11.2 mm S d creepage distance in air 9.7 mm A Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. 2000 IXYS All rights reserved 1 - 2 032VBE 26-12NO7 40 3.0 50 T = 100C T = 100C VJ VJ A mC V = 600V A V = 600V R R 35 2.5 40 Q I 30 r RM I T =150C F VJ 2.0 T =100C 25 I = 30A VJ F 30 I = 30A I = 15A T = 25C F F VJ I = 15A 20 1.5 I = 7.5A F F I = 7.5A F 20 15 1.0 10 10 0.5 5 0 0.0 0 A/ms 012 34V 100 A/ms 1000 0 200 400 600 800 1000 V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 2.0 180 120 1.2 T = 100C T = 100C VJ VJ V = 600V R I = 15A F ns V s V FR 1.5 160 t fr V t FR rr K f 80 0.8 t I = 30A fr F I = 15A 1.0 140 F I = 7.5A I F RM 40 0.4 0.5 120 Q r 0.0 100 0 0.0 0 40 80 120 C 160 0 200 400 600 800 1000 0 200 400 600 A/80m0s 1000 A/ms di /dt T -di /dt F VJ F Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di /dt VJ F 10 Constants for Z calculation: thJC K/W iR (K/W) t (s) thi i 1 1 0.5464 0.0052 2 0.2104 0.0003 Z thJC 3 0.0432 0.0004 4 0.8 0.0092 0.1 0.01 VBE 26-12NO7 / VUE 35-12NO7 0.001 s 0.0001 0.001 0.01 0.1 1 10 t Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values 2000 IXYS All rights reserved 2 - 2