VUE 22-12NO7 TM I = 24 A ECO-PAC dAV V = 1200 V RRM Three Phase Rectifier Bridge t = 40 ns rr D V V Typ RSM RRM V V A H 1200 1200 VUE 22-12NO7 N K Symbol Conditions Maximum Ratings Features Package with DCB ceramic I T = 85C, module 24 A dAV C base plate in low profile I 90 A dAVM Isolation voltage 3000 V~ I T = 45C t = 10 ms (50 Hz), sine 40 A FSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 45 A R Low forward voltage drop Leads suitable for PC board soldering T = T t = 10 ms (50 Hz), sine 35 A VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 40 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 10 A s VJ Supplies for DC power equipment 2 V = 0 t = 8.3 ms (60 Hz), sine 10 A s R Input and output rectifiers for high 2 frequency T = T t = 10 ms (50 Hz), sine 5 A s VJ VJM 2 Battery DC power supplies V = 0 t = 8.3 ms (60 Hz), sine 5 A s R Field supply for DC motors T -40...+150 C VJ T 150 C VJM Advantages T -40...+125 C stg Space and weight savings V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Improved temperature and power I 1 mA t = 1 s 3600 V~ ISOL cycling capability Small and light weight M Mounting torque (M4) 1.5-2/14-18 Nm/lb.in. d Low noise switching Weight typ. 19 g Dimensions in mm (1 mm = 0.0394 ) Symbol Conditions Characteristic Values typ. max. I V = V T = 25C 0.06 mA R R RRM VJ V = V T = T 0.25 mA R RRM VJ VJM V I = 10 A T = 25C 2.92 V F F VJ V for power-loss calculations only 1.39 V T0 r 55 m T R per diode DC current 2.5 K/W thJC R per diode, DC current, typ. 0.3 K/W thCH I I = 12 A, -diF/dt = 100 A/s 4 8.5 A RM F V = 100 V, L = 0.05 mH, T = 100C R VJ t I = 1 A -di/dt = 50 A/s V = 30 V, T = 25C 40 tbd ns rr F R VJ 2 a Max. allowable acceleration 50 m/s d creeping distance on surface 11.2 mm S d creepage distance in air 9.7 mm A Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. 2000 IXYS All rights reserved 1 - 2 032VUE 22-12NO7 30 2000 40 T = 100C T = 100C VJ VJ A V = 600V V = 600V R R A nC 25 1500 30 I I F RM Q I = 20A r F 20 I = 10A F T =150C I = 20A VJ I= 5A F F I = 10A 15 1000 20 F I= 5A F T =100C VJ 10 500 10 T = 25C VJ 5 0 0 0 A/ms 01 234 V 100 A/ms 1000 0 200 400 600 800 1000 V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 2.0 150 120 1.2 T = 100C T = 100C VJ VJ ns V = 600V R I = 10A F 140 V s V t t FR 1.5 fr t rr V fr FR K f 130 80 0.8 I = 20A F 1.0 120 I = 10A I F RM I= 5A F 110 40 0.4 0.5 Q r 100 0.0 90 0 0.0 0 40 80 120 C 160 0 200 400 600 800 1000 0 200 400 600 A/80m0s 1000 A/ms di /dt T -di /dt F VJ F Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di /dt VJ F 10 Constants for Z calculation: thJC K/W iR (K/W) t (s) thi i 1 1 0.8776 0.0052 2 0.3378 0.0003 Z thJC 3 0.0678 0.0004 4 1.2168 0.0092 0.1 0.01 VBE17-12NO7 / VUE22-12NO7 0.001 s 0.0001 0.001 0.01 0.1 1 10 t Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values 2000 IXYS All rights reserved 2 - 2