Product Information

MMBT3904

MMBT3904 electronic component of JSMSEMI

Datasheet
50nA 40V 350mW 200mA 100@10mA,1V 300MHz 300mV@50mA,5mA NPN -55℃~+150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

Manufacturer: JSMSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.0089 ea
Line Total: USD 0.89

173630 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
153842 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 100
Multiples : 100

Stock Image

MMBT3904
JSMSEMI

100 : USD 0.0085
1000 : USD 0.0069
3000 : USD 0.0054
9000 : USD 0.005
45000 : USD 0.0046
90000 : USD 0.0043

     
Manufacturer
Product Category
Category
Datasheet
Rohs
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
LoadingGif

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The MMBT3904 is a NPN bipolar transistor manufactured by JSMSEMI and adheres to the ROHS standards, offered in an SOT-23 package. It offers a maximum voltage rating of 40V and a maximum power dissipation of 350mW. It has an Ic Continuous Collector Current of 200mA as well as a hFE of 100@10mA. The Vce Saturation Voltage is a low 1V at a low Ic of 50mA, and a fT Frequency of 370MHz. The BV Collector-Base Voltage is 300mV at 5mA and an Operation Temperature range from -55? to 150? at (Tj). The thermal resistance junction to ambient is 50nA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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