HX313C9FB/4 Kingston

HX313C9FB/4 electronic component of Kingston
HX313C9FB/4 Kingston
HX313C9FB/4 DRAM
HX313C9FB/4  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of HX313C9FB/4 DRAM across the USA, India, Europe, Australia, and various other global locations. HX313C9FB/4 DRAM are a product manufactured by Kingston. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. HX313C9FB/4
Manufacturer: Kingston
Category: DRAM
Description: DRAM Module DDR3 SDRAM 4Gbyte 240DIMM
Datasheet: HX313C9FB/4 Datasheet (PDF)
Price (USD)
2: USD 50.1187 ea
Line Total: USD 100.24 
Availability : 0
  
QtyUnit Price
2$ 50.1187

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 2
Multiples : 1
QtyUnit Price
2$ 50.1187

   
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We are delighted to provide the HX313C9FB/4 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HX313C9FB/4 and other electronic components in the DRAM category and beyond.

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HX318C10FB/4 HX313C9FB/4 4GB 512M x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power TBD W* UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C *Power will vary depending on the SDRAM used. DESCRIPTION FEATURES HyperX HX313C9FB/4 is a 512M x 64-bit (4GB) DDR3-1333 JEDEC standard 1.5V (1.425V ~1.575V) Power Supply CL9 SDRAM (Synchronous DRAM) 1Rx8 memory module, VDDQ = 1.5V (1.425V ~ 1.575V) based on eight 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3-1333 at latency timing 667MHz fCK for 1333Mb/sec/pin 9-9-9 at 1.5V. The JEDEC standard electrical and mechanical 8 independent internal bank specifications are as follows: Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset Height 1.291 (32.80mm) w/heatsink, single sided component Continued >> kingston.com/hyperx Document No. 4806990-001.B00 04/23/15 Page 1continued HyperX MODULE WITH HEAT SPREADER 7.08 mm 133.35 mm MODULE DIMENSIONS FOR MORE INFORMATION, GO TO WWW.KINGSTON.COM/HYPERX All Kingston products are tested to meet our published specifications. Some motherboards or system configurations may not operate at the published HyperX memory speeds and timing settings. Kingston does not recommend that any user attempt to run their computers faster than the published speed. Overclocking or modifying your system timing may result in damage to computer components. kingston.com/hyperx Document No. 4806990-001.B00 Page 2 32.8 mm

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Kingston Technology
KINGSTON TECHNOLOGY COMPANY
KNG
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