KVR16R11D8/8 Kingston

KVR16R11D8/8 electronic component of Kingston Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of KVR16R11D8/8 DRAM across the USA, India, Europe, Australia, and various other global locations. KVR16R11D8/8 DRAM are a product manufactured by Kingston. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. KVR16R11D8/8
Manufacturer: Kingston
Category: DRAM
Description: DRAM Module DDR3 SDRAM 8Gbyte 240RDIMM
Datasheet: KVR16R11D8/8 Datasheet (PDF)
Price (USD)
1: USD 98.3282 ea
Line Total: USD 98.33 
Availability : 0
  
QtyUnit Price
1$ 98.3282

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 98.3282

   
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We are delighted to provide the KVR16R11D8/8 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KVR16R11D8/8 and other electronic components in the DRAM category and beyond.

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Memory Module Speci cations KVR16R11D8/8 8GB 2Rx8 1G x 72-Bit PC3-12800 CL11 Registered w/Parity 240-Pin DIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 1G x 72-bit (8GB) DDR3- CL(IDD) 11 cycles 1600 CL11 SDRAM (Synchronous DRAM), registered w/parity, Row Cycle Time (tRCmin) 48.125ns (min.) 2Rx8 ECC memory module, based on eighteen 512M x 8-bit Refresh to Active/Refresh 260ns (min.) FBGA components. The SPD is programmed to JEDEC stan- Command Time (tRFCmin) dard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 240- Row Active Time (tRASmin) 35ns (min.) pin DIMM uses gold contact fingers. The electrical and me- Maximum Operating Power 3.630 W* chanical specifications are as follows: UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES *Power will vary depending on the SDRAM and JEDEC standard 1.5V (1.425V ~1.575V) Power Supply Register/PLL used. VDDQ = 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin On-DIMM thermal sensor (Grade B) Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB : Height 1.180 (30.00mm), double sided component Continued >> Document No. VALUERAM1322-001.C00 10/08/14 Page 1MODULE DIMENSIONS: Document No. VALUERAM1322-001.C00 Page 2

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Kingston Technology
KINGSTON TECHNOLOGY COMPANY
KNG
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