X-On Electronics has gained recognition as a prominent supplier of KVR16S11S8/4 DRAM across the USA, India, Europe, Australia, and various other global locations. KVR16S11S8/4 DRAM are a product manufactured by Kingston. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

KVR16S11S8/4 Kingston

KVR16S11S8/4 electronic component of Kingston
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See Product Specifications
Part No. KVR16S11S8/4
Manufacturer: Kingston
Category: DRAM
Description: DRAM Module DDR3 SDRAM 4Gbyte 204SODIMM
Datasheet: KVR16S11S8/4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 42.959 ea
Line Total: USD 128.88 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3
Multiples : 1
3 : USD 42.959

   
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We are delighted to provide the KVR16S11S8/4 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KVR16S11S8/4 and other electronic components in the DRAM category and beyond.

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Memory Module Speci cations KVR16S11S8/4 4GB 1Rx8 512M x 64-Bit PC3-12800 CL11 204-Pin SODIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 512M x 64-bit (4GB) CL(IDD) 11 cycles DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memory Row Cycle Time (tRCmin) 48.125ns (min.) module, based on eight 512M x 8-bit FBGA components. The Refresh to Active/Refresh 260ns (min.) SPD is programmed to JEDEC standard latency DDR3-1600 Command Time (tRFCmin) timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold Row Active Time (tRASmin) 35ns (min.) contact fingers. The electrical and mechanical specifications Maximum Operating Power 2.100 W* are as follows: UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES *Power will vary depending on the SDRAM used. JEDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB : Height 1.180 (30.00mm), double sided component Continued >> Document No. VALUERAM1233-001.A00 06/20/12 Page 1MODULE DIMENSIONS: Document No. VALUERAM1233-001.A00 Page 2

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Kingston Technology
KINGSTON TECHNOLOGY COMPANY
KNG
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