Product Information

LGB15N41ATI

LGB15N41ATI electronic component of Littelfuse

Datasheet
Littelfuse IGBT DISCRETE

Manufacturer: Littelfuse
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7097 ea
Line Total: USD 1.71

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

LGB15N41ATI
Littelfuse

1 : USD 1.7097
5 : USD 1.5469
14 : USD 1.1534
38 : USD 1.0991

     
Manufacturer
Product Category
Power Dissipation
Category
Mounting
Kind Of Package
Collector Current
Case
Type Of Transistor
Pulsed Collector Current
Features Of Semiconductor Devices
Application
Gate-Emitter Voltage
Collector-Emitter Voltage
LoadingGif

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The LGB15N41ATI with Littelfuse IGBT DISCRETE is a high-performance, insulated-gate bipolar transistor (IGBT) made by the Littelfuse brand. It is specifically designed as an insulated-gate bipolar transistor (IGBT) to provide superior power switching performance in a variety of high power applications. This device has an 8A collector current of at 150°C, isolation voltage of 1500V, and a switch voltage of 150V. It has an especially low on state voltage drop (Vce(sat)) of 2.20V @ 8A. Additionally, the LGB15N41ATI with Littelfuse IGBT DISCRETE provides tight thermal and SOA performance, making it perfect for most high-powered applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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