TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP3011 Series RoHS Pb GREEN SP3011 Series 0.40pF Diode Array for USB 3.0 Description The SP3011 integrates six channels of ultra-low capacitance rail-to-rail diodes and an additional zener diode to provide protection for USB 3.0 ports that may experience destructive electrostatic discharges (ESD). This high density array can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. Its extremely low loading capacitance makes it ideal for protecting any high-speed signal pins. Pinout Features ESD, IEC 61000-4-2, 8kV Low leakage current of 8 14 contact, 15kV air 0.1A (TYP) at 5V EFT, IEC 61000-4-4, 40A Small form factor DFN (5/50ns) (JEDEC MO-229) package saves board space Lightning, IEC 61000-4-5, 3A (8/20s) RoHS compliant and lead- 7 1 free Low capacitance of 0.4pF *Pins 1, 2, 3, 4, 5, 6, 7 are not internally connected but should be connected to the opposite pin with the PCB (TYP) per I/O AEC-Q101 qualified trace. Applications Functional Block Diagram Notebooks Desktops External Storage Ultramobile PC Digital Camcorder Smartphone Pin 11 Pin 8 MP3/PMP Player Set Top Box (DVR/PVR) Pin 12 Pin 9 Pin 13 Pin 14 GND (Pin 10) Application Example USB Port USB Controller V BUS Additional Information SSTX+ SSTX - Outside IC SSRX+ World Datasheet Resources Samples SSRX - GND SP3011 -06UTG D+ D- Signal GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/17/19 TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP3011 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 3.0 A PP p T Operating Temperature 40 to 125 C OP T Storage Temperature 55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 6.0 V RWM R Reverse Leakage Current I V =5V, Any I/O to GND 0.1 0.5 A LEAK R I =1A, t =8/20s, Fwd 11.0 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 12.5 V PP p Dynamic Resistance R (V -V ) / (I -I ) 1.5 DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact) 8 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 15 kV 1 Diode Capacitance C Reverse Bias=0V 0.4 pF I/O-GND 1 Note: Parameter is guaranteed by design and/or device characterization. Capacitance vs. Bias Voltage Insertion Loss (S21) I/O to GND 0.5 0 -5 0.4 -10 0.3 -15 0.2 -20 0.1 -25 -30 0.0 10 100 1000 10000 0.0 1.0 2.0 3.0 4.0 5.0 Frequency (MHz) Bias Voltage (V) Clamping Voltage vs. I Pulse Waveform PP 16.0 110% 100% 14.0 90% 12.0 80% 70% 10.0 60% 8.0 50% 40% 6.0 30% 4.0 20% 10% 2.0 0% 0.0 0.05.0 10.0 15.0 20.0 25.0 30.0 1.01.5 2.02.5 3.0 Time (s) Peak Pulse Current - I (A) PP 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/17/19 Clamp Voltage (V ) Capacitance (pF) C Percent of I PP Attenuation (dB)