TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3014 Series SP3400 RoHS GREEN Pb SP3400, 1pF, 30kV Diode Array Description The SP3400 integrates 2 channels of low capacitance steering diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). The SP3400 can safely absorb repetitive ESD strikes above the maximum contact level specified in IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. The low off-state capacitance makes it ideal for protecting high-speed signal lines such as USB2.0 or USB 3.0 and 1Gb Ethernet with an extremely low dynamic resistance to protect the most sensitive, state of the art chipsets against ESD transients. Pinout Features ESD, IEC 61000-4-2, Small form factor DFN 30kV contact, 30kV air (JEDEC MO-229) package provides flow through EFT, IEC 61000-4-4, 80A routing to simplify PCB (t =5/50ns) P layout Lightning, 8A (8/20 as AEC-Q101 qualified defined in IEC 61000-4-5 nd 2 edition) Moisture Sensitivity Level(MSL -1) Low capacitance of 1pF (TYP) per I/O Halogen free, lead free and RoHS compliant Low leakage current of 0.01A (TYP) at 5V Functional Block Diagram Applications LCD/PDP TVs Ultrabooks/Notebooks External Storages Digital Cameras DVD/Blu-ray Players Portable Medical Set Top Boxes Automotive Electronics Smartphones Wearable Technology USB 2.0 Protection Application Example USB Port *Package is shown as transparent USB Controller V BUS D+ D- SP1003 IC SP3400 SP3014 GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2018 Littelfuse, Inc. SP3014-02UTG Specifications are subject to change without notice. Revision: 09/11/18 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3014 Series SP3400 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 8 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I = 1A 5.0 V RWM R Breakdown Voltage V I = 1mA 6.5 7.8 V BR R Reverse Leakage Current I V =5V, Any I/O to GND 0.01 0.5 A LEAK R I =1A, t =8/20s, Fwd 9.2 12 V PP p 1 Clamp Voltage V C I =8A, t =8/20s, Fwd 13 16 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.24 DYN p IEC 61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV C 1 I/O-GND 3 Diode Capacitance Reverse Bias=0V, f= 3 GHz pF C 0.5 I/O-I/O Note: 1 Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns. 3. Package sizes larger than 0201 can add parasitic capacitance, inductance and resistance. 8/20s Pulse Waveform Clamping voltage vs. I for 8/20s waveshape PP 110% 14 100% 12 90% 80% 10 70% 8 60% 50% 6 40% 4 30% 20% 2 10% 0 0% 0246 8 0.05.0 10.015.020.025.030.0 Time (s) Peak Pulse Current-I (A) PP 2018 Littelfuse, Inc. SP3014-02UTG Specifications are subject to change without notice. Revision: 09/11/18 Percent of I PP Clamp Voltage (V ) C SP3012