SZP6SMB36CAT3G Littelfuse

SZP6SMB36CAT3G electronic component of Littelfuse
SZP6SMB36CAT3G Littelfuse
SZP6SMB36CAT3G ESD Protection Diodes / TVS Diodes
SZP6SMB36CAT3G  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SZP6SMB36CAT3G ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SZP6SMB36CAT3G ESD Protection Diodes / TVS Diodes are a product manufactured by Littelfuse. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. SZP6SMB36CAT3G
Manufacturer: Littelfuse
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes 36V 600W BI-DIR SZP6SMB AEC-Q101
Datasheet: SZP6SMB36CAT3G Datasheet (PDF)
Price (USD)
2351: USD 0.1106 ea
Line Total: USD 260.02 
Availability : 3035
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
2351$ 0.1106
2384$ 0.1091
2422$ 0.1074
2461$ 0.1057
2500$ 0.104
2542$ 0.1023
2584$ 0.1006
3000$ 0.0989

Availability 3035
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 2351
Multiples : 1
QtyUnit Price
2351$ 0.1106
2384$ 0.1091
2422$ 0.1074
2461$ 0.1057
2500$ 0.104
2542$ 0.1023
2584$ 0.1006
3000$ 0.0989


Availability 436
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.385
50$ 0.3078
150$ 0.1853
500$ 0.1576
2500$ 0.1452
5000$ 0.1376

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Pd - Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the SZP6SMB36CAT3G from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SZP6SMB36CAT3G and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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P6SMB11CAT3G Series, SZP6SMB11CAT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors www.onsemi.com Bidirectional* PLASTIC SURFACE MOUNT The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have ZENER OVERVOLTAGE excellent clamping capability, high surge capability, low zener TRANSIENT SUPPRESSORS impedance and fast response time. The SMB series is supplied in 9.478 VOLTS ON Semiconductors exclusive, cost-effective, highly reliable SURMETIC package and is ideally suited for use in 600 WATT PEAK POWER communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Features SMB Working Peak Reverse Voltage Range 9.4 to 77.8 V CASE 403A PLASTIC Standard Zener Breakdown Voltage Range 11 to 91 V Peak Power 600 W 1 ms ESD Rating of Class 3 (> 16 kV) per Human Body Model Maximum Clamp Voltage Peak Pulse Current MARKING DIAGRAM Low Leakage < 5 A Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns AYWW SZ Prefix for Automotive and Other Applications Requiring Unique xxC Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These are PbFree Devices* xxC = Device Code Mechanical Characteristics: A = Assembly Location CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Y = Year FINISH: All External Surfaces are Corrosion Resistant and Leads are WW = Work Week Readily Solderable = PbFree Package MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: (Note: Microdot may be in either location) 260C for 10 Seconds LEADS: Modified LBend Providing More Contact Area to Bond Pads ORDERING INFORMATION POLARITY: Polarity Band Will Not be Indicated Device Package Shipping MOUNTING POSITION: Any P6SMBxxCAT3G SMB 2,500 / (PbFree) Tape & Reel SZP6SMBxxCAT3G SMB 2,500 / (PbFree) Tape & Reel The T3 suffix refers to a 13 inch reel. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices. Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 13 P6SMB11CAT3/DP6SMB11CAT3G Series, SZP6SMB11CAT3G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) T = 25C, Pulse Width = 1 ms P 600 W L PK DC Power Dissipation T = 75C Measured Zero Lead Length (Note 2) P 3.0 W L D Derate Above 75C 40 mW/C Thermal Resistance, JunctiontoLead R 25 C/W JL DC Power Dissipation (Note 3) T = 25C P 0.55 W A D Derate Above 25C 4.4 mW/C Thermal Resistance, JunctiontoAmbient 226 C/W R JA Operating and Storage Temperature Range T , T 65 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 10 X 1000 s, nonrepetitive 2. 1 square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. ELECTRICAL CHARACTERISTICS I I (T = 25C unless otherwise noted) PP A Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V V V R C BR RWM V Clamping Voltage I C PP V I R V V V RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional TVS V Maximum Temperature Coefficient of V BR BR ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) Breakdown Voltage V I (Note 6) C PP V I C RWM R typ V Volts (Note 5) I V I (Note 4) V V (Note 7) RWM BR T C PP BR Device Min Nom Max mA Marking Volts A Volts Amps %/C pF Device* P6SMB11CAT3G 11C 9.4 5 10.5 11.05 11.6 1 15.6 38 0.075 865 P6SMB12CAT3G 12C 10.2 5 11.4 12 12.6 1 16.7 36 0.078 800 P6SMB15CAT3G 15C 12.8 5 14.3 15.05 15.8 1 21.2 28 0.084 645 P6SMB16CAT3G 16C 13.6 5 15.2 16 16.8 1 22.5 27 0.086 610 P6SMB18CAT3G 18C 15.3 5 17.1 18 18.9 1 25.2 24 0.088 545 P6SMB20CAT3G 20C 17.1 5 19 20 21 1 27.7 22 0.09 490 P6SMB22CAT3G 22C 18.8 5 20.9 22 23.1 1 30.6 20 0.09 450 P6SMB24CAT3G 24C 20.5 5 22.8 24 25.2 1 33.2 18 0.094 415 P6SMB27CAT3G 27C 23.1 5 25.7 27.05 28.4 1 37.5 16 0.096 370 P6SMB30CAT3G 30C 25.6 5 28.5 30 31.5 1 41.4 14.4 0.097 335 P6SMB33CAT3G 33C 28.2 5 31.4 33.05 34.7 1 45.7 13.2 0.098 305 P6SMB36CAT3G 36C 30.8 5 34.2 36 37.8 1 49.9 12 0.099 280 P6SMB39CAT3G 39C 33.3 5 37.1 39.05 41 1 53.9 11.2 0.1 260 P6SMB43CAT3G 43C 36.8 5 40.9 43.05 45.2 1 59.3 10.1 0.101 240 P6SMB47CAT3G 47C 40.2 5 44.7 47.05 49.4 1 64.8 9.3 0.101 220 P6SMB51CAT3G 51C 43.6 5 48.5 51.05 53.6 1 70.1 8.6 0.102 205 P6SMB56CAT3G 56C 47.8 5 53.2 56 58.8 1 77 7.8 0.103 185 P6SMB62CAT3G 62C 53 5 58.9 62 65.1 1 85 7.1 0.104 170 P6SMB68CAT3G 68C 58.1 5 64.6 68 71.4 1 92 6.5 0.104 155 P6SMB82CAT3G 82C 70.1 5 77.9 82 86.1 1 113 5.3 0.105 130 4. A transient suppressor is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than RWM the DC or continuous peak operating voltage level. 5. V measured at pulse test current I at an ambient temperature of 25C. BR T 6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 600 Watt at the beginning of this group. 7. Bias Voltage = 0 V, F = 1 MHz, T = 25C J *Include SZ-prefix devices where applicable. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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