Product Information

CD4148WSP

Product Image X-ON

Datasheet
Switching Diode 75V 150mA 1.25V @ 100mA 4ns 0805 RoHS
Manufacturer: LIZ



Price (USD)

50: USD 0.0162 ea
Line Total: USD 0.81

48850 - Global Stock
Ships to you between
Tue. 04 Apr to Fri. 07 Apr
MOQ: 50 Multiples:50
Pack Size :   50
Availability Price Quantity
11640 - Global Stock


Ships to you between
Tue. 04 Apr to Fri. 07 Apr

MOQ : 50
Multiples : 50
50 : USD 0.0162
500 : USD 0.0128
1500 : USD 0.0111
5000 : USD 0.0099
25000 : USD 0.0088
50000 : USD 0.0083

     
Manufacturer
LIZ
Product Category
Diodes - General Purpose, Power, Switching
Package / Case
805
Configuration
-
Recovery Time
4ns
Category
Diodes-General Purpose, Power, Switching
Rohs
y
Brand
LIZ
Voltage - Dc Reverse Vr Max
75 V
Current - Average Rectified Io
150 mA
Voltage - Forward Vf Max @ If
1.25 V @ 100 MA
Reverse Voltage Vr
75 V
Operating Temperature
+ 150 C @ (Tj)
Maximum Power Dissipation
400 mW
Forward Voltage Vf@If
1.25 V @100 mA
Reverse Leakage Current
5 uA @75V
Average Rectified Current Io
150 mA
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CHIP DIODE Switching Diode CD4148WSP 1:6 Switching Diode CD4148WSP FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 1206 & 0603 Leadfree and RoHS compliance components o For small signal switching and operating ambient temperature less than 55 C and voltage withstand less than 60V not suitable for AC switching input as rectified circuit and high reverse voltage location. CD4148WSN is suitable for those application MECHANICAL CHARACTERISTICS Size: 0805 Weight: approx. 6mg Marking: Cathode terminal DIMENSIONS Dimension/mm 0805 L 2.00.2 W 1.250.2 T 0.850.1 C 0.450.2 1) THERMAL CHARACTERISTICS o 1) Parameter at T =25 C Symbol Value Unit amb 200 mW Forward Power Dissipation P o tot o Power derating above 25 C 1.6 mW/ C o Junction Temperature T 150 C j o Thermal Resistance Junction to Ambient air R 375 C/W JA o Operating& Storage Temperature range T -55 to 150 C stg 1) Valid provided that electrodes are kept at ambient temperature. www.lizgroup.com Ref No: CD4148WSP V3.2 NOV 25, 2010 CHIP DIODE Switching Diode CD4148WSP 2:6 1) MAXIMUM RATING o 1) Parameter at T =25 C Symbol Value Unit amb Repetitive Peak Reverse Voltage V 75 V RRM Average rectified current sin half wave I 150 mA F(AV) rectification with resistive load Repetitive Peak Forward Current at T =25C I 300 mA amb FRM Non-Repetitive Surge Forward Current 500 mA o at t<1s and T =25 C I j FSM o at t8.3ms and T =25 C 1000 mA j 1) Valid provided that electrodes are kept at ambient temperature. 1) ELECTRICAL CHARACTERISTICS o 1) Parameter at T =25 C Symbol Value Unit amb Forward Voltage at I=10mA 1.0 V F MAX V F at I =100mA 1.25 V F MAX Leakage Current at V=20V 0.025 uA R MAX I R Leakage Current at V =75V 5 uA R MAX Capacitance at V =0V, f=1MHz C 4 pF R tot MAX Reverse Recovery Time at I =I =10mA,R =100 t 4 ns F R L rr MAX 1) Valid provided that electrodes are kept at ambient temperature. TYPICAL CHARACTERISTICS Figure 1. Forward Characteristic Figure 2. Power De-rating 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 180 200 Tamb-Ambient Temperature/oC www.lizgroup.com Ref No: CD4148WSP V3.2 NOV 25, 2010 Ptot-Admissible Power Dissipation/ mW

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free