Product Information

GTVA123501FA-V1-R0

GTVA123501FA-V1-R0 electronic component of Wolfspeed

Datasheet
RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 350W

Manufacturer: Wolfspeed
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 879.165 ea
Line Total: USD 879.16

37 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
37 - WHS 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 808.6455
25 : USD 808.5995
50 : USD 808.5765
100 : USD 808.565
250 : USD 808.5535
500 : USD 808.5075
1000 : USD 808.4615
2500 : USD 808.3925

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Mounting Style
Package / Case
Packaging
Brand
Development Kit
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
KIT8020-CRD-8FF1217P-1 electronic component of Wolfspeed KIT8020-CRD-8FF1217P-1

Power Management IC Development Tools SiC MOSFET Eval kit
Stock : 0

PTFC270101M-V1-R1K electronic component of Wolfspeed PTFC270101M-V1-R1K

RF MOSFET Transistors RF LDMOS FET
Stock : 0

PTFA080551E-V4-R0 electronic component of Wolfspeed PTFA080551E-V4-R0

RF MOSFET Transistors MOSFET
Stock : 0

KIT8020-CRD-5FF0917P-2 electronic component of Wolfspeed KIT8020-CRD-5FF0917P-2

Power Management IC Development Tools SiC MOSFET Eval kit Evaluation Board
Stock : 0

PTVA102001EA-V1-R0 electronic component of Wolfspeed PTVA102001EA-V1-R0

RF MOSFET Transistors RF LDMOS FET
Stock : 0

PTFB092707FH-V1-R0 electronic component of Wolfspeed PTFB092707FH-V1-R0

RF MOSFET Transistors RF LDMOS FET
Stock : 0

GTVA126001EC-V1-R0 electronic component of Wolfspeed GTVA126001EC-V1-R0

RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 600W
Stock : 33

KIT-CRD-3DD12P electronic component of Wolfspeed KIT-CRD-3DD12P

Power Management IC Development Tools BUCK BOOST EVAL KIT for C3M Series
Stock : 0

PTFC210202FC-V1-R0 electronic component of Wolfspeed PTFC210202FC-V1-R0

RF MOSFET Transistors RF LDMOS FET
Stock : 26

PTMA180402M-V1-R500 electronic component of Wolfspeed PTMA180402M-V1-R500

RF Amplifier Power Amplifier
Stock : 420

Image Description
MAGX-001214-500L00 electronic component of MACOM MAGX-001214-500L00

Trans JFET 21.5A GaN HEMT 2-Pin
Stock : 0

MMBFJ305 electronic component of ON Semiconductor MMBFJ305

Transistors RF JFET TO-236AB JFET
Stock : 0

GTVA104001FA-V1-R0 electronic component of Wolfspeed GTVA104001FA-V1-R0

RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 400W
Stock : 48

MRFG35010AR1 electronic component of NXP MRFG35010AR1

RF JFET Transistors 3.5GHZ 10W GAAS NI360HF
Stock : 0

TGF2929-HM electronic component of Qorvo TGF2929-HM

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
Stock : 0

T2G6001528-Q3 electronic component of Qorvo T2G6001528-Q3

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
Stock : 0

QPD1016 electronic component of Qorvo QPD1016

RF JFET Transistors 500W 50V 1.2-1.4 GHz GaN Transistor
Stock : 0

QPD0020 electronic component of Qorvo QPD0020

RF JFET Transistors Evaluation Board - QPD0020
Stock : 0

GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, DC - 1.4 GHz Description The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface-mount GTVA123501FA package with earless flange. Package H-37265J-2 Features Power Sweep, Pulsed CW GaN on SiC HEMT technology V = 50 V, I = 100 mA DS DQ Input matched 300 s pulse width, 10% duty cycle Typical pulsed CW performance: pulse width = 300 s, duty cycle = 10%, DC - 1.4 Hz, V = 50 V, I = 100 mA DS DQ 22 80 - Output power = 350 W min P 3dB - Drain Efficiency = 70 % 70 21 - Gain = 18 dB 60 20 Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001) 50 19 Capable of handling 10:1 VSWR (all phase angles) at 40 V = 50 V, I = 100 mA, = 1300 MHz, P = 350 W Gain: 1200 MHz DS DQ OUT 18 30 peak Gain: 1300 MHz Gain: 1400 MHz 17 Pb-free and RoHS compliant 20 Eff: 1200 MHz Eff: 1300 MHz 16 10 Eff: 1400 MHz g123501fa gr300-1 15 0 0 50 100 150 200 250 300 350 400 450 Output Power (W) RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) V = 50 V, I = 100 mA, P = 350 W, = 1300 MHz, pulse width = 300 s, 10% duty cycle DD DQ OUT Characteristic Symbol Min Typ Max Unit Gain G 19.4 20 21.5 dB ps Drain Efficiency h 70 74 % D All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 03, 2019-01-07 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain (dB) Efficiency (%)GTVA123501FA 2 Typical Performance (data taken in a Wolfspeed production test fixture) Power Sweep, Pulsed CW Power Sweep, Pulsed CW V = 50 V, I = 100 mA, DS DQ V = 50 V, I = 100 mA, DS DQ 2 ms pulse width, 20% duty cycle 1 ms pulse width, 10% duty cycle 22 80 22 80 70 70 21 21 60 60 20 20 50 50 19 19 40 40 Gain: 1200MHz 18 18 Gain: 1300MHz 30 30 1200 MHz - Gain Gain: 1400MHz 1300 MHz - Gain 17 17 20 20 1400 MHz - Gain Eff: 1200 MHz 1200 MHz - Eff Eff: 1300MHz 16 16 10 1300 MHz - Eff 10 Eff: 1400MHz 1400 MHz - Eff g123501fa gr20-3 15 0 g123501fa gr10-2 15 0 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 350 400 450 Output Power (W) Output Power (W) Load Pull Performance Pulsed CW signal: 16 sec pulse width, 10% duty cycle, V = 50 V, I = 300 mA, compression level = P DS DQ 3dB Class AB Max Output Power Freq Zs Zl Gain P P PAE OUT OUT MHz dB % W W dBm W 1200 1.91 j4.59 2.64 j0.41 18.9 56.85 484 68.2 1300 4.57 j4.77 2.60 j1.02 18.4 56.59 456 65.8 1400 4.70 + j1.32 1.98 j0.34 18.6 56.41 438 66.5 Pulsed CW signal: 16 sec pulse width, 10% duty cycle, V = 50 V, I = 300 mA, compression level = P DS DQ 3dB Class AB Max Efficiency Freq Zs Zl Gain P P PAE OUT OUT MHz dB % W W dBm W 1200 1.91 j4.59 3.55 j0.13 19.2 56.42 439 72.3 1300 4.57 j4.77 3.35 + j0.10 19.1 56.05 403 71.0 1400 4.70 + j1.32 1.83 j0.04 19.0 56.20 417 68.0 Pulsed CW signal: 16 sec pulse width, 10% duty c ycle, V = 50 V, I = 300 mA, compression level = P DS DQ 3dB Class AB Z Optimal Freq Zs Zl Gain P P PAE OUT OUT MHz dB % W W dBm W 1200 1.91 j4.59 4.54 + j0.53 19.3 55.63 366 72.2 1300 4.57 j4.77 3.80 + j0.25 19.2 55.64 366 73.8 1400 4.70 + j1.32 2.69 + j0.19 18.8 55.75 376 72.2 Rev. 03, 2019-01-07 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. 03, 2019-01-07 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain (dB) Efficiency (%) Gain (dB) Efficiency (%)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wolfspeed
Wolfspeed / Cree
Wolfspeed(CREE)

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted