MPKC2CA200U60 Magnachip

MPKC2SA/CA200U60 600V FRD Module MPKC2SA/CA200U60 600V FRD Module General Description Features Ultra-FRD module devices are optimized to reduce losses Repetitive Reverse Voltage : V = 600V RRM and EMI/RFI in high frequency power conditioning electrical Low Forward Voltage : V (typ.) = 1.45V F systems. Average Forward Current : I (Av.)=200A @T =100 F C These diode modules are ideally suited for power converters, Ultra-Fast Reverse Recovery Time : t (typ.) = 45ns rr motors drives and other applications where switching losses Extensive Characterization of Recovery Parameters are significant portion of the total losses. Reduced EMI and RFI Isolation Type Package Applications High Speed & High Power converters, Welders Various Switching and Telecommunication Power Supply Ordering Information Product MPKC2SA200U60 MPKC2CA200U60 Name Side Common Center Common & N-type & N-type Optional E301932 Information 5DM-2 o Absolute Maximum Ratings @Tc = 25 C (Per Leg) Characteristics Conditions Symbol Rating Unit Repetitive Peak Reverse Voltage V 600 V RRM Reverse DC Voltage V 480 V R(DC) o T =25 C 400 A C Average Forward Current Resistive Load I F(AV) o TC=100 C 200 A One Half Cycle at 60Hz, Surge(non-repetitive) Forward Current I 3300 A FSM Peak Value Value for One Cycle Current, 2 2 3 2 I t for Fusing I t 45.0* 10 A s t = 8.3ms, T= 25 Start w j Junction Temperature T -40 ~ 150 J Maximum Power Dissipation P 540 W D Isolation Voltage @AC 1 minutes V 2500 V isol Storage Temperature T -40 ~ 150 stg Mounting Torque - 4.0 N.m Terminal Torque Typical Including Screws - 3.0 N.m Weight - 180 g 1 Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd. MPKC2SA/CA200U60 600V FRD Module o Electrical Characteristics @Tc = 25 C(unless otherwise specified) Characteristics Conditions Symbol Min. Typ. Max. Unit Cathode Anode Breakdown Voltage I =100uA V 600 - - V R R T =25 - 1.45 1.8 C Diode Maximum Forward Voltage I =200A V V F FM T =100 - 1.35 - C T =100, c Diode Peak Reverse Recovery Current T =100 IRRM - - 1.0 mA C V applied RRM IF =1A,VR=30V Diode Reverse Recovery Time T =25 t - 45 60 ns C rr di/dt = -400A/uS T =25 - 110 140 C I =200A,V =300V F R Diode Reverse Recovery Time t ns rr di/dt = -400A/uS T =100 - 180 - C Thermal Characteristics Characteristics Conditions Symbol Min. Typ. Max. Unit Thermal Resistance(Isolation Type) Junction to Case R - - 0.23 /W th(j-c) 2 Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd.