MMD60R900P Datasheet
MMD60R900P
600V 0.9 N-channel MOSFET
Description
MMD60R900P is power MOSFET using magnachip s advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Package & Internal Circuit
D
Parameter Value Unit
V @ T 650 V
DS j,max
R 0.9
DS(on),max
V 3 V
TH,typ G
I 4.5 A
D
G
Q 12.3 nC
g,typ
D
S
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code Marking Temp. Range Package Packing RoHS Status
TO-252
MMD60R900PRH 60R900P -55 ~ 150 Reel & Tube Halogen Free
(DPAK)
1
Jul. 2013 Revision 1.0 MagnaChip Semiconductor Ltd.
MMD60R900P Datasheet
Absolute Maximum Rating (T =25 unless otherwise specified)
c
Parameter Symbol Rating Unit Note
Drain Source voltage V 600 V
DSS
Gate Source voltage V 30 V
GSS
4.5 A T =25
C
Continuous drain current I
D
2.7 A T =100
C
(1)
Pulsed drain current I 13.5 A
DM
Power dissipation P 38 W
D
Single - pulse avalanche energy E 46 mJ
AS
MOSFET dv/dt ruggedness dv/dt 50 V/ns
Diode dv/dt ruggedness dv/dt 15 V/ns
Storage temperature T -55 ~150
stg
Maximum operating junction
T 150
j
temperature
1) Pulse width t limited by T
P j,max
2) I I , V V
SD D DS peak (BR)DSS
Thermal Characteristics
Parameter Symbol Value Unit
Thermal resistance, junction-case max R 3.25 /W
thjc
Thermal resistance, junction-ambient max R 62.5 /W
thja
2
Jul. 2013 Revision 1.0 MagnaChip Semiconductor Ltd.