X-On Electronics has gained recognition as a prominent supplier of 23LCV512-I/SN SRAM across the USA, India, Europe, Australia, and various other global locations. 23LCV512-I/SN SRAM are a product manufactured by Microchip. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

23LCV512-I/SN Microchip

23LCV512-I/SN electronic component of Microchip
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See Product Specifications
Part No.23LCV512-I/SN
Manufacturer: Microchip
Category: SRAM
Description: Memory; SRAM; 64kx8bit; 2.5÷5.5V; 20MHz; SO8; Interface: SPI
Datasheet: 23LCV512-I/SN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 2.5125 ea
Line Total: USD 251.25

Availability - 291
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
291
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 100
Multiples : 100
100 : USD 2.5125
300 : USD 2.4125
500 : USD 2.375
1000 : USD 2.2625
2500 : USD 2.225
5000 : USD 2.1875
7500 : USD 2.1625

1
Ship by Fri. 26 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 3.1713
10 : USD 3.0962
30 : USD 3.0475
100 : USD 2.9988

2434
Ship by Thu. 25 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 2.2195
100 : USD 2.1735
500 : USD 2.1735

1750
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 2.938
10 : USD 2.899
25 : USD 2.834

121
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 15
Multiples : 1
15 : USD 2.7462

64
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 3
Multiples : 1
3 : USD 2.5701
25 : USD 2.4674
100 : USD 2.3699

1750
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 23
Multiples : 1
23 : USD 4.4984

291
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 100
Multiples : 100
100 : USD 3.38

43
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 4
Multiples : 1
4 : USD 2.6806
25 : USD 2.5597
100 : USD 2.4466

   
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We are delighted to provide the 23LCV512-I/SN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 23LCV512-I/SN and other electronic components in the SRAM category and beyond.

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23LCV512 512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface Device Selection Table Part Dual I/O Battery Max. Clock VCC Range Packages Number (SDI) Backup Frequency 23LCV512 2.5-5.5V Yes Yes 20 MHz SN, ST, P Features: Description: SPI-Compatible Bus Interface: The Microchip Technology Inc. 23LCV512 is a 512-Kbit Serial SRAM device. The memory is accessed via a - 20 MHz Clock rate simple Serial Peripheral Interface (SPI) compatible - SPI/SDI mode serial bus. The bus signals required are a clock input Low-Power CMOS Technology: (SCK) plus separate data in (SI) and data out (SO) - Read Current: 3 mA at 5.5V, 20 MHz lines. Access to the device is controlled through a Chip - Standby Current: 4 A at +85C Select (CS) input. Additionally, SDI (Serial Dual Inter- face) is supported if your application needs faster data Unlimited Read and Write Cycles rates. External Battery Backup support This device also supports unlimited reads and writes to Zero Write Time the memory array, and supports data backup via exter- 64K x 8-bit Organization: nal battery/coin cell connected to VBAT (pin 7). - 32-byte page The 23LCV512 is available in standard packages Byte, Page and Sequential mode for Reads and including 8-lead SOIC, PDIP and advanced 8-lead Writes TSSOP. High Reliability Temperature Range Supported: Package Types (not to scale) - Industrial (I): -40 Cto +85C Pb-Free and RoHS Compliant, Halogen Free. 8-Lead SOIC, TSSOP and PDIP Packages Pin Function Table SOIC/TSSOP/PDIP Name Function CS 1 8 Vcc CS Chip Select Input SO/SIO1 2 7 VBAT SO/SIO1 Serial Output/SDI pin NC 3 6 SCK Vss Ground Vss 4 5 SI/SIO0 SI/SIO0 Serial Input/SDI pin SCK Serial Clock VBAT External Backup Supply Input Vcc Power Supply 2012-2021 Microchip Technology Inc. DS20005157B-page 123LCV512 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ......................................................................................................... -0.3V to VCC +0.3V All inputs and outputs w.r.t. V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias...............................................................................................................-40C to +85C NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Param. (1) Sym. Characteristic Min. Typ. Max. Units Test Conditions No. D001 VCC Supply voltage 2.5 5.5 V 23LCV512 D002 VIH High-level input 0.7 x VCC + 0.3 V voltage VCC D003 VIL Low-level input -0.3 0.10 x V 23LCV512 voltage VCC D004 VOL Low-level output 0.2 VIOL = 1 mA voltage D005 VOH High-level output VCC - 0.5 V IOH = -400 A voltage D006 ILI Input leakage 1 ACS = VCC, VIN = VSS OR VCC current D007 ILO Output leakage 1 ACS = VCC, VOUT = VSS OR VCC current D008 ICC Read Operating current 3 10 mA FCLK = 20 MHz SO = O, 5.5V D009 ICCS Standby current 4 10 ACS = VCC = 5.5V, Inputs tied to VCC or VSS D010 CINT Input capacitance 7 pF VCC = 0V, f = 1 MHz, Ta = 25C (Note 1) DR RAM data retention 1.0 V (Note 2) D011 V voltage D012 VTRIP VBAT Change Over 1.6 1.8 2.0 V Typical at Ta = 25C (Note 1) D013 VBAT VBAT Voltage Range 1.4 3.6 V (Note 1) D014 IBAT VBAT Current 1 A Typical at 2.5V, Ta = 25C (Note 1) Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room temperature (25C). 2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically sampled and not 100% tested. DS20005157B-page 2 2012-2021 Microchip Technology Inc.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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