Product Information

23LCV512-I/SN

Product Image X-ON

Datasheet
Memory; SRAM; 64kx8bit; 2.5÷5.5V; 20MHz; SO8; Interface: SPI

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 2.85 ea
Line Total: USD 285

3300 - Global Stock
Ships to you between
Fri. 02 Jun to Thu. 08 Jun
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
3300 - Global Stock


Ships to you between Fri. 02 Jun to Thu. 08 Jun

MOQ : 100
Multiples : 100

Stock Image

23LCV512-I/SN
Microchip

100 : USD 2.85
200 : USD 2.7125
400 : USD 2.575
800 : USD 2.45
1000 : USD 2.325

586 - Global Stock


Ships to you between Fri. 02 Jun to Thu. 08 Jun

MOQ : 1
Multiples : 1

Stock Image

23LCV512-I/SN
Microchip

1 : USD 2.8662
25 : USD 2.7355
125 : USD 2.6781

13 - Global Stock


Ships to you between
Fri. 09 Jun to Wed. 14 Jun

MOQ : 1
Multiples : 1

Stock Image

23LCV512-I/SN
Microchip

1 : USD 5.2319
10 : USD 4.5812
30 : USD 4.1924
100 : USD 3.6254
500 : USD 3.4451
1000 : USD 3.3634

3299 - Global Stock


Ships to you between Fri. 02 Jun to Thu. 08 Jun

MOQ : 1
Multiples : 1

Stock Image

23LCV512-I/SN
Microchip

1 : USD 2.847
10 : USD 2.782
15 : USD 2.717
100 : USD 2.665

1800 - Global Stock


Ships to you between Fri. 02 Jun to Thu. 08 Jun

MOQ : 3
Multiples : 1

Stock Image

23LCV512-I/SN
Microchip

3 : USD 4.7392

268 - Global Stock


Ships to you between Fri. 02 Jun to Thu. 08 Jun

MOQ : 7
Multiples : 1

Stock Image

23LCV512-I/SN
Microchip

7 : USD 5.7443
10 : USD 4.0623
50 : USD 3.3299
100 : USD 2.7854

3300 - Global Stock


Ships to you between Fri. 02 Jun to Thu. 08 Jun

MOQ : 100
Multiples : 100

Stock Image

23LCV512-I/SN
Microchip

100 : USD 3.591
200 : USD 3.4178
400 : USD 3.2445
800 : USD 3.087
1000 : USD 2.9295

     
Manufacturer
Microchip
Product Category
SRAM
RoHS - XON
Y Icon ROHS
Memory Size
512 kb it
Organization
64 K X 8
Access Time
-
Maximum Clock Frequency
20 MHz
Interface Type
Serial, 4 - Wire, Sdi, Spi
Supply Voltage - Max
5.5 V
Supply Voltage - Min
2.5 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
Smd/Smt
Package / Case
SOIC - 8
Packaging
Tube
Supply Current - Max
10 mA
Memory Type
Sdr
Type
Synchronous
Brand
Microchip
Factory Pack Quantity :
100
Series
23Lcv512
Cnhts
8542319000
Hts Code
8542320041
Mxhts
85423201
Product Type
Sram
Subcategory
Memory & Data Storage
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
Stock Image 24AA00-I/SN
Memory; EEPROM; I2C; 16x8bit; 1.8÷6V; 400kHz; SO8
Stock : 1298
Stock Image 24AA00-I/ST
Memory; EEPROM; I2C; 16x8bit; 1.8÷6V; 400kHz; TSSOP8
Stock : 337
Stock Image 24AA00P
Microchip Technology EEPROM 16byte 128kb 1.8V
Stock : 2982
Stock Image 24AA00SN
Microchip Technology EEPROM 16byte 128kb 1.8V
Stock : 0
Stock Image 24AA00T-I/OT
Memory; EEPROM; I2C; 16x8bit; 1.8÷6V; 400kHz; SOT23-5
Stock : 4000
Stock Image 24AA00T-ISN
Microchip Technology EEPROM 16byte 128kb 1.8V
Stock : 0
Stock Image 23LCV512-I/ST
Memory; SRAM; 64kx8bit; 2.5÷5.5V; 20MHz; TSSOP8; Interface: SPI
Stock : 1200
Stock Image 24AA00-I/P
Memory; EEPROM; I2C; 16x8bit; 1.8÷6V; 400kHz; DIP8
Stock : 1138
Stock Image 24AA00T-I/MC
EEPROM 16 byte 128 bit 1.8V SEE IND
Stock : 0
Image Description
Stock Image 23LC512-IP

Microchip Technology SRAM 512K 2.5V SPI SERIAL SRAM SQI
Stock : 140

Stock Image 23LC1024-I/P

SRAM 1024K 2.5V SPI SERIAL SRAM SQI
Stock : 300

Stock Image 23K640-I/P

Memory; SRAM; 8kx8bit; 2.7÷3.6V; 16MHz; DIP8; Interface: SPI
Stock : 33

Stock Image CS5242CM

SRAM CS5242CM
Stock : 0

Stock Image 47C04-E/SN

SRAM 4k, 5.0V EERAM EXT
Stock : 0

Stock Image 47C16-E/SN

SRAM 16k, 5.0V EERAM EXT
Stock : 0

Stock Image 47C16T-I/SN

SRAM 16k, 5.0V EERAM IND
Stock : 0

Stock Image 47L04T-I/SN

SRAM 4k, 3.0V EERAM IND
Stock : 0

Stock Image 47L16T-I/SN

SRAM 16k, 3.0V EERAM IND
Stock : 0

23LCV512 512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface Device Selection Table Part Dual I/O Battery Max. Clock VCC Range Packages Number (SDI) Backup Frequency 23LCV512 2.5-5.5V Yes Yes 20 MHz SN, ST, P Features: Description: SPI-Compatible Bus Interface: The Microchip Technology Inc. 23LCV512 is a 512-Kbit Serial SRAM device. The memory is accessed via a - 20 MHz Clock rate simple Serial Peripheral Interface (SPI) compatible - SPI/SDI mode serial bus. The bus signals required are a clock input Low-Power CMOS Technology: (SCK) plus separate data in (SI) and data out (SO) - Read Current: 3 mA at 5.5V, 20 MHz lines. Access to the device is controlled through a Chip - Standby Current: 4 A at +85C Select (CS) input. Additionally, SDI (Serial Dual Inter- face) is supported if your application needs faster data Unlimited Read and Write Cycles rates. External Battery Backup support This device also supports unlimited reads and writes to Zero Write Time the memory array, and supports data backup via exter- 64K x 8-bit Organization: nal battery/coin cell connected to VBAT (pin 7). - 32-byte page The 23LCV512 is available in standard packages Byte, Page and Sequential mode for Reads and including 8-lead SOIC, PDIP and advanced 8-lead Writes TSSOP. High Reliability Temperature Range Supported: Package Types (not to scale) - Industrial (I): -40 Cto +85C Pb-Free and RoHS Compliant, Halogen Free. 8-Lead SOIC, TSSOP and PDIP Packages Pin Function Table SOIC/TSSOP/PDIP Name Function CS 1 8 Vcc CS Chip Select Input SO/SIO1 2 7 VBAT SO/SIO1 Serial Output/SDI pin NC 3 6 SCK Vss Ground Vss 4 5 SI/SIO0 SI/SIO0 Serial Input/SDI pin SCK Serial Clock VBAT External Backup Supply Input Vcc Power Supply 2012-2021 Microchip Technology Inc. DS20005157B-page 123LCV512 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ......................................................................................................... -0.3V to VCC +0.3V All inputs and outputs w.r.t. V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias...............................................................................................................-40C to +85C NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Param. (1) Sym. Characteristic Min. Typ. Max. Units Test Conditions No. D001 VCC Supply voltage 2.5 5.5 V 23LCV512 D002 VIH High-level input 0.7 x VCC + 0.3 V voltage VCC D003 VIL Low-level input -0.3 0.10 x V 23LCV512 voltage VCC D004 VOL Low-level output 0.2 VIOL = 1 mA voltage D005 VOH High-level output VCC - 0.5 V IOH = -400 A voltage D006 ILI Input leakage 1 ACS = VCC, VIN = VSS OR VCC current D007 ILO Output leakage 1 ACS = VCC, VOUT = VSS OR VCC current D008 ICC Read Operating current 3 10 mA FCLK = 20 MHz SO = O, 5.5V D009 ICCS Standby current 4 10 ACS = VCC = 5.5V, Inputs tied to VCC or VSS D010 CINT Input capacitance 7 pF VCC = 0V, f = 1 MHz, Ta = 25C (Note 1) DR RAM data retention 1.0 V (Note 2) D011 V voltage D012 VTRIP VBAT Change Over 1.6 1.8 2.0 V Typical at Ta = 25C (Note 1) D013 VBAT VBAT Voltage Range 1.4 3.6 V (Note 1) D014 IBAT VBAT Current 1 A Typical at 2.5V, Ta = 25C (Note 1) Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room temperature (25C). 2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically sampled and not 100% tested. DS20005157B-page 2 2012-2021 Microchip Technology Inc.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
AT9
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi