X-On Electronics has gained recognition as a prominent supplier of 2N5116UB JFET across the USA, India, Europe, Australia, and various other global locations. 2N5116UB JFET are a product manufactured by Microchip. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

2N5116UB Microchip

2N5116UB electronic component of Microchip

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Part No.	2N5116UB
Manufacturer:	Microchip
Category:	JFET
Description:	JFET JFET Small signal PNP device with a high current and low saturation voltage.
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 107.5016 ea
Line Total: USD 107.5

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

2N5116UB More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 09 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 107.5016 25 : USD 64.4996

0 Ship by Fri. 09 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 107.5016 25 : USD 64.4996

We are delighted to provide the 2N5116UB from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5116UB and other electronic components in the JFET category and beyond.

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Additional Infomation About Product

The 2N5116UB is an NPN bipolar junction transistor manufactured by Microchip. It has an operating junction temperature range of -55 to +150 °C, with a Cbo of 70 pF, a collector-emitter breakdown voltage of 80V, and a maximum collector power dissipation of 500 mW. It also has a high current gain, allowing for a wide range of applications where amplified current is required, such as motor controlling, audio amplifying and switching. The transistor is offered in a surface-mount SOT-23 package, with a minimal package size for space-constrained designs.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Microchip Microchip
Product Category JFET JFET
RoHS - XON N N
Transistor Polarity P - Channel P - Channel
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Vgs - Gate-Source Breakdown Voltage 30 V 30 V
Id - Continuous Drain Current - 500 pA - 500 pA
Rds On - Drain-Source Resistance 175 Ohms 175 Ohms
Pd - Power Dissipation 500 mW (1/2 w) 500 mW (1/2 w)
Mounting Style Through Hole Through Hole
Package / Case TO - 18 - 3 TO - 18 - 3
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 200 C + 200 C
Operating Temperature Range - 65 C to + 200 C - 65 C to + 200 C
Type Jfet Jfet
Brand Microchip Microchip
Forward Transconductance - Min 4 V 4 V
Gate-Source Cutoff Voltage 4 V 4 V
Maximum Drain Gate Voltage 30 V 30 V
Factory Pack Quantity : 100 100