Product Information

ARF468BG

ARF468BG electronic component of Microchip

Datasheet
RF MOSFET Transistors FG, MOSFET, 500V, TO-264, RoHS

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 69.96 ea
Line Total: USD 1749

0 - Global Stock
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 25
Multiples : 25

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ARF468BG
Microchip

25 : USD 67.045

     
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ARF468AG ARF468BG TO-264 Common Source RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 300W 45MHz The ARF468A and ARF468B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation. Low Cost Common Source RF Package. Specified 150 Volt, 40.68 MHz Characteristics: Low Vth thermal coefficient. Output Power = 300 Watts. Low Thermal Resistance. Gain = 15dB (Class AB) Optimized SOA for Superior Ruggedness. Efficiency = 75% (Class C) MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter Ratings UNIT V Drain-Source Voltage 500 DSS Volts V Drain-Gate Voltage 500 DGO I Continuous Drain Current T = 25C Amps 22 D C V Gate-Source Voltage Volts 30 GS Total Power Dissipation T = 25C P Watts 300 C D Junction to Case R C/W 0.35 JC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500 Volts DSS GS D 1 , ) R Drain-Source On-State Resistance (V = 10V I = 11A ohms 0.3 DS(ON) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 250 DS GS C Gate-Source Leakage Current (V = 30V, V = 0V) I 100 nA GS DS GSS g Forward Transconductance (V = 25V, I = 11A) mhos 5 8 9 fs DS D Gate Threshold Voltage (V = V , I = 1mA) Volts V (TH) 2.5 4 5 DS GS D GS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS ARF468AG BG Symbol Characteristic Test Conditions MIN TYP MAX UNIT Input Capacitance C V = 0V 2230 iss GS V = 150V Output Capacitance pF C DS 230 oss f = 1 MHz Reverse Transfer Capacitance C 105 rss FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Amplifier Power Gain f = 40.68 MHz 14 15 dB PS V = 2.5V V = 150V 70 75 Drain Efficiency GS DD % P = 300W out Electrical Ruggedness VSWR 10:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380S, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 1.0E8 60 V > I (ON) x R (ON)MAX. DS D DS 250SEC. PULSE TEST <0.5 % DUTY CYCLE C 50 iss T = -55C J 1.0E9 40 T = +25C J 30 C oss C rss 1.0E10 20 10 T = +125C J 1.0E11 0 2 4 6 8 10 0 50 100 150 200 250 300 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , GATE-TO-SOURCE VOLTAGE (VOLTS) DS GS Figure 1, Typical Capacitance vs. Drain-to-Source Voltage Figure 2, Typical Transfer Characteristics 52 8 OPERATION HERE LIMITED BY R (ON) DS 7 10 6 100uS 5 5 4 1mS 1 3 .5 10mS 2 T =+25C C 100mS T =+150C 1 J SINGLE PULSE .1 0 1 10 100 1000 -50 0 50 100 150 V , DRAIN-TO-SOURCE VOLTAGE (V) T , CASE TEMPERATURE (C) DS C Figure 3, Typical Maximum Safe Operating Area Figure 4, Typical Threshold Voltage vs Temperature 050-4982 Rev A 7-2014 CAPACITANCE (pf) I , DRAIN CURRENT (A) D V , THRESHOLD VOLTAGE I , DRAIN CURRENT (A) GS(th) D (NORMALIZED)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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