Product Information

2N6796

2N6796 electronic component of Microchip

Datasheet
MOSFET N Channel MOSFET

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0 - WHS 1

MOQ : 1
Multiples : 496

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2N6796
Microchip

1 : USD 5.177
N/A

     
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RoHS - XON
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2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: N-CHANNEL MOSFET JAN, JANTX, JANTXV Available on and JANS* commercial Qualified per MIL-PRF-19500/557 versions DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high- reliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website 2N6796, 2N6798, 2N6800, 2N6802 Notes: 1. Derate linearly 0.2 W/C for T > +25 C. C 2. The following formula derives the maximum theoretical I limit. I is also limited by package and internal wires and may be limited due to D D pin diameter. 3. I = 4 x I as calculated in note 2. DM D1 MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only). MARKING: Part number, date code, manufacturers ID. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6796 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS level (2N6798) Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. di/dt I Forward current F R Gate drive impedance G V Drain supply voltage DD V Drain source voltage, dc DS V Gate source voltage, dc GS T4-LDS-0047, Rev. 3 (121483) 2012 Microsemi Corporation Page 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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