2N7002215 NXP

2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits Suitable for logic level gate drive Surface-mounted package sources Trench MOSFET technology Very fast switching 1.3 Applications Logic level translators High-speed line drivers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 150C --60 V DS j I drain current V =10V T =25 C see Figure 1 - - 300 mA D GS sp see Figure 3 P total power dissipation T =25 C see Figure 2 --0.83W tot sp Static characteristics R drain-source on-state V =10V I =500 mA T =25C -2.8 5 DSon GS D j resistance see Figure 6 see Figure 8 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S SOT23 (TO-236AB) SOT232N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002 TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code 2N7002 12% 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 150 C - 60 V DS j V drain-gate voltage 25 C T 150 C R =20k -60 V DGR j GS V gate-source voltage -30 30 V GS V peak gate-source voltage pulsed t 50 s = 0.25 -40 40 V GSM p I drain current V =10V T =25 C see Figure 1 - 300 mA D GS sp see Figure 3 V =10V T = 100 C see Figure 1 - 190 mA GS sp I peak drain current pulsed t 10 s T =25 C see -1.2 A DM p sp Figure 3 P total power dissipation T =25 C see Figure 2 -0.83W tot sp T junction temperature -65 150 C j T storage temperature -65 150 C stg Source-drain diode I source current T = 25 C - 300 mA S sp I peak source current pulsed t 10 s T =25C - 1.2 A SM p sp 2N7002 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 8 September 2011 2 of 13