APT100GT60B2R(G) APT100GT60LR(G) 600V, 100A, V = 2.1V Typical CE(ON) Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated G Low Forward Voltage Drop C E G C E High Frequency Switching to 50KHz Low Tail Current Ultra Low Leakage Current Integrated Gate Resistor Low EMI, High Reliability RoHS Compliant Maximum Ratings All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol Ratings Unit Collector-Emitter Voltage 600 V CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 148 C1 C I Continuous Collector Current T = 100C 80 Amps C2 C 1 I Pulsed Collector Current 300 CM SSOA Switching Safe Operating Area T = 150C 300A 600V J Total Power Dissipation 500 Watts P D Operating and Storage Junction Temperature Range -55 to 150 C T , T J STG Static Electrical Characteristics Characteristic / Test Conditions Unit Symbol Min Typ Max V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 - - (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1.5mA, T = 25C) 345 GE(TH) CE GE C j Volts Collector Emitter On Voltage (V = 15V, I = 100A, T = 25C) 1.7 2.1 2.5 GE C j V CE(ON) Collector Emitter On Voltage (V = 15V, I = 100A, T = 125C) - 2.5 - GE C j 2 -- 25 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) CE GE j A I CES 2 - - 1000 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) CE GE j I Gate-Emitter Leakage Current (V = 30V) - - 300 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristic APT100GT60B2R LR(G) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance - 5150 - ies V = 0V, V = 25V GE CE C Output Capacitance - 475 - pF oes f = 1MHz C Reverse Transfer Capacitance - 295 - res V Gate-to-Emitter Plateau Voltage - 8.0 - V GEP Gate Charge 3 Q Total Gate Charge - 460 - V = 15V g GE V = 300V Q Gate-Emitter Charge - 40 - nC ge CE I = 100A Q C Gate-Collector Charge - 210 - gc T = 150C, R = 4.3 , V = 15V, J G GE SSOA Switching Safe Operating Area 300 A L = 100 H, V = 600V CE t Turn-On Delay Time -40 - d(on) t Inductive Switching (25C) Current Rise Time - 75 - r ns V = 400V t CC Turn-Off Delay Time - 320 - d(off) V = 15V GE t Current Fall Time - 100 - f I = 100A C 4 E Turn-On Switching Energy - 3250 - on1 R = 4.3 G 5 E Turn-On Switching Energy - 3525 - J T = +25C on2 J 6 E Turn-Off Switching Energy - 3125 - off t Turn-On Delay Time -40 - d(on) t Current Rise Time - 75 - r Inductive Switching (125C) ns t Turn-Off Delay Time - 350 - V = 400V d(off) CC t V = 15V Current Fall Time - 100 - GE f I = 100A 4 E C Turn-On Switching Energy - 3275 - on1 R = 4.3 G 5 E Turn-On Switching Energy - 4650 - J on2 T = +125C J 6 E Turn-Off Switching Energy - 3750 - off Thermal and Mechanical Characteristics Characteristic / Test Conditions Min Typ Max Unit Symbol - - 0.25 R Junction to Case (IGBT) JC C/W - - N/A R Junction to Case (DIODE) JC Package Weight W - 29.2 - g T - - 10 inlbf Torque Terminals and Mounting Screws - - 1.1 Nm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages. ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to on1 z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance not including gate driver impedance. G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6297 Rev C 3 - 2012