DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description This low threshold depletion-mode (normally-on) High input impedance transistor utilizes an advanced vertical DMOS structure Low input capacitance and Supertexs well-proven silicon-gate manufacturing Fast switching speeds process. This combination produces a device with the Low on-resistance power handling capabilities of bipolar transistors and Free from secondary breakdown with the high input impedance and positive temperature Low input and output leakage coefcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway Applications and thermally-induced secondary breakdown. Normally-on switches Supertexs vertical DMOS FETs are ideally suited to a Solid state relays wide range of switching and amplifying applications where Converters high breakdown voltage, high input impedance, low input Linear ampliers capacitance, and fast switching speeds are desired. Constant current sources Power supply circuits Telecom Ordering Information R I Package Option DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-243AA (SOT-89) () (mA) DN3535 DN3535N8-G 350 10 200 -G indicates package is RoHS compliant (Green) Absolute Maximum Ratings Pin Conguration DRAIN Parameter Value Drain-to-source voltage BV DSX SOURCE Drain-to-gate voltage BV DGX DRAIN GATE Gate-to-source voltage 20V TO-243AA (SOT-89) Operating and storage O O -55 C to +150 C temperature Product Marking O Soldering temperature* 300 C W = Code for week sealed D N 5 S W = Green Packaging Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation Package may or may not include the following marks: Si or of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-243AA (SOT-89) * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN3535 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-243AA 230 500 1.6 15 78 230 500 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 350 - - V V = -5.0V, I = 1.0A DSS GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 15V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 15V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 A V = Max rating, V = -5.0V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -5.0V, T = 125 C GS A I Saturated drain-to-source current 200 - - mA V = 0V, V = 15V DSS GS DS Static drain-to-source on-state R - - 10 V = 0V, I = 150mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transconductance 200 - - mmho V = 10V, I = 100mA FS DS D C Input capacitance - - 360 ISS V = -5.0V, V = 25V, GS DS C Common source output capacitance - - 40 pF OSS f = 1.0MHz C Reverse transfer capacitance - - 10 RSS t Turn-on delay time - - 15 d(ON) V = 25V, DD t Rise time - - 20 I = 150mA, r D ns R = 25, t Turn-off delay time - - 20 GEN d(OFF) V = 0V to -10V GS t Fall time - - 30 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 150mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 150mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2