Supertex inc. DN3135 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance The Supertex DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device Low on-resistance with the power handling capabilities of bipolar transistors Free from secondary breakdown and with the high input impedance and positive temperature Low input and output leakage coefcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and Applications thermally-induced secondary breakdown. Normally-on switches Solid state relays Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Linear ampliers high breakdown voltage, high input impedance, low input Constant current sources capacitance, and fast switching speeds are desired. Power supply circuits Telecom Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-236AB (SOT-23) TO-243AA (SOT-89) () (mA) DN3135 DN3135K1-G DN3135N8-G 350 35 180 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN DRAIN SOURCE SOURC E Absolute Maximum Ratings DRAIN GATE GATE Parameter Value TO-236AB (SOT-23) (K1) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSX Drain-to-gate voltage BV Product Marking DGX Gate-to-source voltage 20V W = Code for week sealed N 1 S W = Green Packaging Operating and storage O O -55 C to +150 C temperature Package may or may not include the following marks: Si or O TO-236AB (SOT-23) (K1) Soldering temperature* 300 C Absolute Maximum Ratings are those values beyond which damage to the device W = Code for week sealed may occur. Functional operation under these conditions is not implied. Continuous D N 1 S W operation of the device at the absolute rating level may affect device reliability. All = Green Packaging voltages are referenced to device ground. Package may or may not include the following marks: Si or * Distance of 1.6mm from case for 10 seconds. TO-243AA (SOT-89) (N8) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN3135 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM Package O (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB 72 300 0.36 200 350 72 300 TO-243AA 135 300 1.3 34 97 135 300 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mmx 1.57mm. O (T = 25 C unless otherwise specied) Electrical Characteristics A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 350 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 15V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 15V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 A V = Max rating, V = -5.0V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -5.0V, T = 125 C GS A I Saturated drain-to-source current 180 - - mA V = 0V, V = 15V DSS GS DS Static drain-to-source on-state R - - 35 V = 0V, I = 150mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transconductance 140 - - mmho V = 10V, I = 100mA FS DS D C Input capacitance - 60 120 ISS V = -5.0V, GS C Common source output capacitance - 6.0 15 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 10 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 15 I = 150mA, r D ns R = 25, t Turn-off delay time - - 15 GEN d(OFF) V = 0v to -10V GS t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 150mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 150mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R L INPUT Pulse 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON ) r d(OFF) f INPU T VDD D.U.T. 10% 10% OUTPUT 0V 90% 90% Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2