DN3525N8-G Microchip

DN3525N8-G electronic component of Microchip
DN3525N8-G Microchip
DN3525N8-G MOSFETs
DN3525N8-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DN3525N8-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN3525N8-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.DN3525N8-G
Manufacturer:Microchip
Category:MOSFETs
Description:Transistor: N-MOSFET; unipolar; 250V; 0.3A; 1.6W; SOT89-3
Datasheet:DN3525N8-G Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
500: USD 0.9262 ea
Line Total: USD 463.1 
Availability : 1940
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
500$ 0.9262
2000$ 0.915
4000$ 0.9125
6000$ 0.91
8000$ 0.9075
10000$ 0.905
16000$ 0.9038
26000$ 0.9012
  

Availability1940
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 500
Multiples : 1
QtyUnit Price
500$ 0.9262
2000$ 0.915
4000$ 0.9125
6000$ 0.91
8000$ 0.9075
10000$ 0.905
16000$ 0.9038
26000$ 0.9012


Availability1940
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.0898
2000$ 1.0765

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
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Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DN3525N8-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN3525N8-G and other electronic components in the MOSFETs category and beyond.

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DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN3525 is a low threshold depletion-mode High input impedance (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device Low on-resistance with the power handling capabilities of bipolar transistors Free from secondary breakdown and with the high input impedance and positive temperature Low input and output leakage coefcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Normally-on switches wide range of switching and amplifying applications where Solid state relays high breakdown voltage, high input impedance, low input Converters capacitance, and fast switching speeds are desired. Constant current sources Power supply circuits Telecom Ordering Information Package Option R I DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-243AA (SOT-89) () (mA) DN3525 DN3525N8-G 250 6.0 300 -G indicates package is RoHS compliant (Green) Absolute Maximum Ratings Pin Conguration Parameter Value DRAIN Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX SOURCE DRAIN Gate-to-source voltage 20V GATE Operating and storage O O TO-243AA (SOT-89) (N8) -55 C to +150 C temperature O Soldering temperature* 300 C Product Marking Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All D N 5 C W voltages are referenced to device ground. = Green Packaging Package may or may not include the following marks: Si or * Distance of 1.6mm from case for 10 seconds. TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN3525 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-243AA 360 1.0 1.6 15 78 360 1.0 Notes: I (continuous) is limited by max rated T . D J Mounted on FR5 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Symbol Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 250 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 15V, I = 1.0mA GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 15V, I = 1.0mA GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 A V = Max rating, V = -5.0V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -5.0V, T = 125 C GS A I Saturated drain-to-source current 300 - - mA V = 0V, V = 15V DSS GS DS Static drain-to-source on-state R - - 6.0 V = 0V, I = 200mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 200mA DS(ON) DS(ON) GS D G Forward transconductance 225 - - mmho V = 10V, I = 150mA FS DS D C Input capacitance - 270 350 ISS V = -5.0V, GS C Common source output capacitance - 20 60 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 5.0 20 RSS t Turn-on delay time - - 20 d(ON) V = 25V, DD t Rise time - - 25 I = 150mA, r D ns R = 25, t Turn-off delay time - - 25 GEN d(OFF) V = 0V to -10V GS t Fall time - - 40 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 150mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 150mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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