Product Information

DN3765K4-G

DN3765K4-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 650V; 0.2A; 2.5W; TO252

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 3.0625 ea
Line Total: USD 306.25

1940 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
1940 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 100
Multiples : 100

Stock Image

DN3765K4-G
Microchip

100 : USD 3.0625
250 : USD 3.05
500 : USD 3.025
2000 : USD 3
4000 : USD 2.9875
6000 : USD 2.9625
8000 : USD 2.9375
10000 : USD 2.9125

1269 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

DN3765K4-G
Microchip

1 : USD 3.7835
25 : USD 3.174
100 : USD 2.9785

1940 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 100
Multiples : 100

Stock Image

DN3765K4-G
Microchip

100 : USD 4.107

3860 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3
Multiples : 1

Stock Image

DN3765K4-G
Microchip

3 : USD 3.7804
10 : USD 3.7648
25 : USD 3.7492
100 : USD 3.7323
250 : USD 3.7167
500 : USD 3.6423

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertexs well- Low input capacitance proven silicon-gate manufacturing process. This combination Fast switching speeds produces a device with the power handling capabilities of Low on-resistance bipolar transistors and with the high input impedance and Free from secondary breakdown positive temperature coefficient inherent in MOS devices. Low input and output leakage Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary Applications breakdown. Normally-on switches Solid state relays Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Linear amplifiers high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Constant current sources Telecom Ordering Information Product Summary Part Number Package Option Packing BV /BV R (max) I (min) DSX DGX DS(ON) DSS DN3765K4-G TO-252 (D-PAK) 2000/Reel 650V 8.0 200mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX SOURCE Gate-to-source voltage 20V GATE O O Operating and storage temperature -55 C to +150 C O TO-252 (D-PAK) Maximum junction temperature 150 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All Product Marking voltages are referenced to device ground. YY = Year Sealed Si YYWW WW = Week Sealed DN3765 Typical Thermal Resistance L = Lot Number LLLLLLL = Green Packaging Package ja O Package may or may not include the following marks: Si or TO-252 (D-PAK) 81 C/W TO-252 (D-PAK) Doc. DSFP-DN3765 Supertex inc. A070113 www.supertex.comDN3765 Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM (continuous) (pulsed) T = 25 C A TO-252 (D-PAK) 300mA 500mA 2.5W 300mA 500mA Notes: O I (continuous) is limited by max rated T of 150 C. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 650 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = -10V, V = Max Rating GS DS I Drain-to-source leakage current V = -10V, V = 0.8 Max Rating, D(OFF) GS DS - - 1.0 mA T = 125C A I Saturated drain-to-source current 200 - - mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - - 8.0 V = 0V, I = 150mA DS(ON) GS D O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transductance 100 - - mmho I = 100mA, V = 10V FS D DS C Input capacitance - - 825 ISS V = -10V, GS C Common source output capacitance - - 190 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 110 RSS t Turn-on delay time - - 50 d(ON) V = 25V, DD t Rise time - - 75 r I = 150mA, ns D t Turn-off delay time - - 75 d(OFF) R = 25 GEN t Fall time - - 100 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 200mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 200mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V VDD 90% INPUT Pulse R L 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) f VDD INPUT D.U.T. 10% 10% OUTPUT 90% 90% 0V Doc. DSFP-DN3765 Supertex inc. A070113 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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