GN2470K4-G

GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate Low voltage drop at high currents bipolar transistor (IGBT) that combines the positive aspects Industry standard TO-252 (D-Pak) package of both BJTs and MOSFETs. 700V breakdown voltage rating The GN2470 IGBT has lower on-state voltage drop with high blocking voltage capabilities and features many desirable Applications properties including a MOS input gate, low conduction voltage drop at high currents. White goods Small appliances Lighting controls Motor drives Meter readers Small off-line power supplies Pin Conguration Ordering Information Package Option COLLECTOR Device TO-252 (D-PAK) GN2470 GN2470K4-G -G indicates that the package is RoHS certied (Green) EMITTER GATE TO-252 (D-PAK) (K4) Pin Conguration Absolute Maximum Ratings YY = Year Sealed Y Y W W Parameter Value WW = Week Sealed G N 2 4 7 0 L = Lot Number Collector-to-emitter voltage 700V L L L L L L L = Green Packaging Gate-to-emitter voltage 20V TO-252 (D-PAK) (K4) Operating junction and storage O O -55 C to +150 C temperature range O Soldering temperature* 300 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comGN2470 IGBT Thermal Characteristics I I Power Dissipation C C jc ja Package O O O (continuous) (pulsed) T = 25 C ( C/W) ( C/W) A TO-252 1.0A 3.5A 2.5W 10 60 Notes: Mounted on FR4 board, 25mm x 25mm x 1.57mm O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Collector-to-emitter breakdown voltage 700 - - V V = 0V, I = 250A CES GE C Emitter-to-collector breakdown voltage BV -6.0 -10 - V V = 0V, I = 1.0mA ECS GE C V Gate threshold voltage 1.5 - 3.5 V V = V , I = 1.0mA GE(th) CE GE C V Collector-to-emitter voltage drop - 4.5 5.0 V I = 3.0A, V = 13V CE C GE g Forward transconductance 0.5 0.8 - mho V = 25V, I = 2.0A fe CE C I Zero gate voltage collector current - - 100 A V = 0V, V = 600V CES GE CE I Gate-to-emitter leakage current - - 100 nA V = 20V, V = 0V GES GE CE I On-state collector current 3.0 4.0 - A V = 10V, V = 25V C(ON) GE CE t Turn-on delay time - 8.0 15 d(ON) V = 25V t Rise time - 400 600 CC r ns R = 25 GEN t Turn-off delay time - 20 50 d(OFF) R = 11 L t Fall time - 7000 12000 f C Input capacitance - 100 150 ISS V = 25V CE V = 0V C Output capacitance - 12 25 pF GE OSS f = 1MHz C Reverse transfer capacitance - 2 5 RSS Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) d(OFF) F r V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2