MCP87130T-U/MF Microchip

MCP87130 High-Speed N-Channel Power MOSFET Features: Description: Low Drain-to-Source On Resistance (R ) DS(ON) The MCP87130 is an N-Channel power MOSFET in a Low Total Gate Charge (Q ) and Gate-to-Drain popular PDFN 5 mm x 6 mm package as well as a G Charge (Q ) GD PDFN 3.3mmx3.3mm package. Advanced Low Series Gate Resistance (R ) packaging and silicon processing technologies allow G Capable of Short Dead-Time Operation the MCP87130 to achieve a low Q for a given R G DS(ON) RoHS Compliant value, resulting in a low Figure of Merit (FOM). Combined with low R , the low FOM of the MCP87130 G Applications: allows high efficiency power conversion with reduced Point-of-Load DC-DC Converters switching and conduction losses. High Efficiency Power Management in Servers, Networking, and Automotive Applications Package Type PDFN 5 x 6 PDFN 3.3 x 3.3 1 8 S D S 2 7 D S 3 6 D 5 G 4 D Product Summary Table: Unless otherwise indicated, T = +25C. A Parameters Sym.Min.Typ.Max.Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage BV 25 V V = 0V, I = 250 A DSS GS D Gate-to-Source Threshold Voltage V 1.1 1.35 1.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 13.8 16.5 m V = 4.5V, I = 10A DS(ON) GS D 11.3 13.5 m V = 10V, I = 10A GS D Total Gate Charge Q 5.5 8 nC V = 12.5V, I = 10A, G DS D V = 4.5V GS Gate-to-Drain Charge Q 2.6 nC V = 12.5V, I = 10A GD DS D Series Gate Resistance R 1.7 G Thermal Characteristics Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN R 73 C/W Note 1 JX Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN R 3.3 C/W Note 2 JC Thermal Resistance Junction-to-X, 8L 5x6-PDFN R 58 C/W Note 1 JX Thermal Resistance Junction-to-Case, 8L 5x6-PDFN R 3.3 C/W Note 2 JC Note 1: R is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1 x 1 mounting pad of 2 oz. cop- JX per. This characteristic is dependent on users board design. 2: R is determined using JEDEC 51-14 Method. This characteristic is determined by design. JC 2013 Microchip Technology Inc. DS20005159B-page 1MCP87130 Notice: Stresses above those listed under 1.0 ELECTRICAL Maximum Ratings may cause permanent damage to CHARACTERISTICS the device. This is a stress rating only and functional operation of the device at those or any other conditions Absolute Maximum Ratings above those indicated in the operational sections of this specification is not intended. Exposure to maximum V .......................................................................+25V DS rating conditions for extended periods may affect V ........................................................... +10.0V / -8V GS device reliability. I Continuous .............................................................. D, 8L 5x6-PDFN ............................. 43A, T = +25C C 8L 3.3x3.3-PDFN ....................... 43A, T = +25C C P ................................................................................. D 8L 5x6-PDFN ........................... 2.1W, T = +25C A 8L 3.3x3.3-PDFN ...................1.7W, T = +25C A T , T .............................................. -55C to +150C J STG E Avalanche Energy....................................... 50 mJ AS I =10A, L= 1mH, R =25 D G DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T = +25C A Parameters Sym.Min.Typ.Max.Units Conditions Static Characteristics Drain-to-Source BV 25 V V = 0V, I = 250 A DSS GS D Breakdown Voltage Drain-to-Source Leakage Current I 1 A V = 0V, V = 20V DSS GS DS Gate-to-Source Leakage Current I 100 nA V = 0V, V = 10V/-8V GSS DS GS Gate-to-Source Threshold Voltage V 1.1 1.35 1.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 17.3 m V = 3.3V, I = 10A DS(ON) GS D 13.8 16.5 m V = 4.5V, I = 10A GS D 11.3 13.5 m V = 10V, I = 10A GS D Transconductance g 40 S V = 12.5V, I = 10A fs DS D Dynamic Characteristics Input Capacitance C 400 pF V = 0V, V = 12.5V, f = 1 MHz ISS GS DS Output Capacitance C 200 pF V = 0V, V = 12.5V, f = 1 MHz OSS GS DS Reverse Transfer Capacitance C 60 pF V = 0V, V = 12.5V, f = 1 MHz RSS GS DS Total Gate Charge Q 5.5 8 nC V = 12.5V, I = 10A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 2.6 nC V = 12.5V, I = 10A GD DS D Gate-to-Source Charge Q 0.9 nC V = 12.5V, I = 10A GS DS D Gate Charge at V Q 0.6 nC V = 12.5V, I = 10A GS(TH) G(TH) DS D Output Charge Q 3.7 nC V = 12.5V, V = 0 OSS DS GS Turn-On Delay Time t 2.2 ns V = 12.5V, V = 4.5V, d(on) DS GS I = 10A, R = 2 D G Rise Time t 5.4 ns V = 12.5V, V = 4.5V, r DS GS I = 10A, R = 2 D G Turn-Off Delay Time t 4.2 ns V = 12.5V, V = 4.5V, d(off) DS GS I = 10A, R = 2 D G Fall Time t 2.1 ns V = 12.5V, V = 4.5V, f DS GS I = 10A, R = 2 D G Series Gate Resistance R 1.7 G DS20005159B-page 2 2013 Microchip Technology Inc.