Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (-2.4V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, High input impedance silicon-gate manufacturing process. This combination produces a Low input capacitance (85pF typ.) device with the power handling capabilities of bipolar transistors Fast switching speeds and the high input impedance and positive temperature coefficient Low on-resistance inherent in MOS devices. Characteristic of all MOS structures, Free from secondary breakdown this device is free from thermal runaway and thermally-induced Low input and output leakage secondary breakdown. Supertexs vertical DMOS FETs are ideally suited to a wide range Applications of switching and amplifying applications where very low threshold Logic level interfaces ideal for TTL and CMOS voltage, high breakdown voltage, high input impedance, low input Solid state relays capacitance, and fast switching speeds are desired. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Package Wafer / Die Options Device NW NJ ND TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) TP0620 TP0620N3-G TP2520NW TP2520NJ TP2520ND For packaged products, -G indicates package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF25 for layout and dimensions. Product Summary Pin Configuration R I V DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (max) (min) (V) (V) () (A) TP0620N3-G -200 12 -0.75 -2.4 DRAIN SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92 (N3) Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C SiTP YY = Year Sealed 0620 Absolute Maximum Ratings are those values beyond which damage to the device WW = Week Sealed may occur. Functional operation under these conditions is not implied. Continuous YYWW = Green Packaging operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TP0620 Thermal Characteristics Power Dissipation I I D D I I O jc ja DR DRM Package T = 25 C (continuous) (pulsed) C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 -175 -0.8 1.0 125 170 -175 -0.8 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -200 - - V V = 0V, I = -2.0mA DSS GS D V Gate threshold voltage -1.0 - -2.4 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - - -4.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA V = 0V, T = 125C GS A -0.25 - - V = -5.0V, V = -25V GS DS I ON-state drain current A D(ON) -0.75 - - V = -10V, V = -25V GS DS - 9.0 15 V = -5.0V, I = -100mA GS D R Static drain-to-source on-state resistance DS(ON) - 7.0 12 V = -10V, I = -200mA GS D O R Change in R with temperature - - 1.7 %/ C V = -10V, I = -200mA DS(ON) DS(ON) GS D G Forward transductance 100 150 - mmho V = -25V, I = -400mA FS DS D C Input capacitance - 85 150 ISS V = 0V, GS C Common source output capacitance - 30 85 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 10 35 RSS t Turn-on delay time - - 10 d(ON) V = -25V, t Rise time - - 15 DD r ns I = -750mA, D t Turn-off delay time - - 20 d(OFF) R = 25 GEN t Fall time - - 16 f V Diode forward voltage drop - - -1.8 V V = 0V, I = -500mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = -500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R -10V GEN 90% t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT Output 0V R 90% 90% L OUTPUT 10% 10% V DD VDD Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2