TN0110N3-G Microchip

TN0110N3-G electronic component of Microchip
TN0110N3-G Microchip
TN0110N3-G MOSFETs
TN0110N3-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TN0110N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0110N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TN0110N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 1W; TO92
Datasheet: TN0110N3-G Datasheet (PDF)
Price (USD)
557: USD 0.4672 ea
Line Total: USD 260.23 
Availability : 552
  
Ship by Wed. 01 Oct to Tue. 07 Oct
QtyUnit Price
557$ 0.4672
564$ 0.4612
569$ 0.4571

Availability 942
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 49
Multiples : 25
QtyUnit Price
49$ 1.442
250$ 1.1775
500$ 1.1638
1000$ 1.1588
3000$ 1.1525
5000$ 1.1463
8000$ 1.1413
15000$ 1.135


Availability 552
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 557
Multiples : 1
QtyUnit Price
557$ 0.4672
564$ 0.4612
569$ 0.4571


Availability 2912
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 477
Multiples : 1
QtyUnit Price
477$ 0.546


Availability 6555
Ship by Mon. 29 Sep to Wed. 01 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.35
25$ 1.0626
100$ 0.9306


Availability 2912
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 477
Multiples : 1
QtyUnit Price
477$ 0.546


Availability 921
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 200
Multiples : 25
QtyUnit Price
200$ 1.3031


Availability 552
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 557
Multiples : 1
QtyUnit Price
557$ 0.4672
564$ 0.4612
569$ 0.4571

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN0110N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0110N3-G and other electronic components in the MOSFETs category and beyond.

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TN0110N3-G is a MOSFET power transistor produced by Microchip. It is a n-channel enhancement-mode power MOSFET with an dual-N-channel logic level drive. It offers superior switching performance with an RDS(on) as low as 8mO. It also features a fast switching speed with an enhanced avalanche well design with EAS (Energy Absorption during Switching). It is designed for use in general purpose switching applications such as switching power supplies, personal computer power supplies, automotive power control, and more.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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