X-On Electronics has gained recognition as a prominent supplier of TN0110N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0110N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN0110N3-G Microchip

TN0110N3-G electronic component of Microchip
TN0110N3-G Microchip
TN0110N3-G MOSFETs
TN0110N3-G  Semiconductors

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See Product Specifications
Part No. TN0110N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 1W; TO92
Datasheet: TN0110N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
140: USD 1.1092 ea
Line Total: USD 155.29 
Availability - 971
Ship by Thu. 15 May to Wed. 21 May
MOQ: 140  Multiples: 1
Pack Size: 1
Availability Price Quantity
971
Ship by Thu. 15 May to Wed. 21 May
MOQ : 140
Multiples : 1
140 : USD 1.1092
250 : USD 0.8495
500 : USD 0.8366
1000 : USD 0.8237
3000 : USD 0.7849
5000 : USD 0.772
8000 : USD 0.7617
15000 : USD 0.7501

552
Ship by Thu. 15 May to Wed. 21 May
MOQ : 159
Multiples : 1
159 : USD 1.6883
191 : USD 1.4069
211 : USD 1.2729

2947
Ship by Thu. 15 May to Wed. 21 May
MOQ : 310
Multiples : 1
310 : USD 0.8653
323 : USD 0.8304
332 : USD 0.8085

6952
Ship by Tue. 13 May to Thu. 15 May
MOQ : 1
Multiples : 1
1 : USD 1.35
25 : USD 1.0626
100 : USD 0.9306

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN0110N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0110N3-G and other electronic components in the MOSFETs category and beyond.

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TN0110N3-G is a MOSFET power transistor produced by Microchip. It is a n-channel enhancement-mode power MOSFET with an dual-N-channel logic level drive. It offers superior switching performance with an RDS(on) as low as 8mO. It also features a fast switching speed with an enhanced avalanche well design with EAS (Energy Absorption during Switching). It is designed for use in general purpose switching applications such as switching power supplies, personal computer power supplies, automotive power control, and more.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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