TN0110N3-G Microchip

TN0110N3-G electronic component of Microchip
TN0110N3-G Microchip
TN0110N3-G MOSFETs
TN0110N3-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TN0110N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0110N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TN0110N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 1W; TO92
Datasheet: TN0110N3-G Datasheet (PDF)
Price (USD)
557: USD 0.4676 ea
Line Total: USD 260.45 
Availability : 552
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
557$ 0.4676
564$ 0.4612
569$ 0.4571

Availability 1940
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 70
Multiples : 25
QtyUnit Price
70$ 1.074
250$ 0.8225
500$ 0.81
1000$ 0.7975
3000$ 0.76
5000$ 0.7475
8000$ 0.7375
15000$ 0.7263


Availability 2816
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 358
Multiples : 1
QtyUnit Price
358$ 0.728


Availability 552
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 557
Multiples : 1
QtyUnit Price
557$ 0.4676
564$ 0.4612
569$ 0.4571


Availability 2327
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.35
25$ 1.0626
100$ 0.9306


Availability 1940
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 150
Multiples : 25
QtyUnit Price
150$ 1.8746


Availability 552
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 557
Multiples : 1
QtyUnit Price
557$ 0.4676
564$ 0.4612
569$ 0.4571


Availability 2816
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 358
Multiples : 1
QtyUnit Price
358$ 0.728

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
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Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Transistor Type
Type
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Forward Transconductance - Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN0110N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0110N3-G and other electronic components in the MOSFETs category and beyond.

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TN0110N3-G is a MOSFET power transistor produced by Microchip. It is a n-channel enhancement-mode power MOSFET with an dual-N-channel logic level drive. It offers superior switching performance with an RDS(on) as low as 8mO. It also features a fast switching speed with an enhanced avalanche well design with EAS (Energy Absorption during Switching). It is designed for use in general purpose switching applications such as switching power supplies, personal computer power supplies, automotive power control, and more.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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