X-On Electronics has gained recognition as a prominent supplier of TN0110N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0110N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN0110N3-G Microchip

Name: TN0110N3-G
Brand: Microchip
SKU: TN0110N3G_Microchip
Availability: InStock
Rating: 5 (11 reviews)

TN0110N3-G electronic component of Microchip

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See Product Specifications

Part No.	TN0110N3-G
Manufacturer:	Microchip
Category:	MOSFETs
Description:	Transistor: N-MOSFET; unipolar; 100V; 2A; 1W; TO92
Datasheet:	TN0110N3-G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

435: USD 0.5981 ea
Line Total: USD 260.17

Availability - 552
Ship by Mon. 30 Jun to Fri. 04 Jul

MOQ: 435 Multiples: 1
Pack Size: 1

TN0110N3-G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2947

Ship by Mon. 30 Jun to Fri. 04 Jul

MOQ : 358
Multiples : 1

358 : USD 0.728

552

Ship by Mon. 30 Jun to Fri. 04 Jul

MOQ : 435
Multiples : 1

435 : USD 0.5981
446 : USD 0.5832
454 : USD 0.5737

6897

Ship by Thu. 26 Jun to Mon. 30 Jun

MOQ : 1
Multiples : 1

1 : USD 1.35
25 : USD 1.0626
100 : USD 0.9306

Specifications

Manufacturer

Microchip Microchip

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

350 mA 350 mA

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

3 Ohms 3 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

600 mV 600 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1 W 1 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 92 TO - 92

Packaging

Bulk Bulk

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Brand

Microchip Microchip

Continuous Drain Current

350 mA 350 mA

Drain-Source Breakdown Voltage

100 V 100 V

Gate-Source Breakdown Voltage

+/- 20 V +/- 20 V

Power Dissipation

1 W 1 W

Rds On

3 Ohms 3 Ohms

Factory Pack Quantity :

1000 1000

Typical Turn-Off Delay Time

6 ns 6 ns

Height

5.33 mm 5.33 mm

Length

5.21 mm 5.21 mm

Transistor Type

1 N - Channel 1 N - Channel

Type

Fet Fet

Width

4.19 mm 4.19 mm

Forward Transconductance - Min

225 Ms 225 Ms

Cnhts

8541210000 8541210000

Fall Time

3 ns 3 ns

Hts Code

8541210095 8541210095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Rise Time

3 ns 3 ns

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-On Delay Time

2 ns 2 ns

Notes:- Show Stocked Products With Similar Attributes.

TN0110N3-G Alternative Parts

We are delighted to provide the TN0110N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0110N3-G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TN0110N3-G is a MOSFET power transistor produced by Microchip. It is a n-channel enhancement-mode power MOSFET with an dual-N-channel logic level drive. It offers superior switching performance with an RDS(on) as low as 8mO. It also features a fast switching speed with an enhanced avalanche well design with EAS (Energy Absorption during Switching). It is designed for use in general purpose switching applications such as switching power supplies, personal computer power supplies, automotive power control, and more.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2947 Ship by Mon. 30 Jun to Fri. 04 Jul MOQ : 358 Multiples : 1	358 : USD 0.728

552 Ship by Mon. 30 Jun to Fri. 04 Jul MOQ : 435 Multiples : 1	435 : USD 0.5981 446 : USD 0.5832 454 : USD 0.5737

6897 Ship by Thu. 26 Jun to Mon. 30 Jun MOQ : 1 Multiples : 1	1 : USD 1.35 25 : USD 1.0626 100 : USD 0.9306

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