MDD5N40RH Magnachip

MDI5N40 N-channel MOSFET 400V MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDI5N40 / MDD5N40 use advanced V = 400V DS Magnachips MOSFET Technology, which provides I = 3.4A V = 10V D GS low on-state resistance, high switching performance R 1.6 V = 10V DS(ON) GS and excellent quality. MDI5N40 is suitable device for SMPS, HID and general purpose applications. Applications Power Supply PFC Ballast D I-PAK (TO-251) G D S G S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 400 V DSS Gate-Source Voltage V 30 V GSS o T =25 C 3.4 A C Continuous Drain Current I D o T =100 C 2.15 A C (1) Pulsed Drain Current I 13.6 A DM o T =25 C 45 C W Power Dissipation P o D o W/ C Derate above 25 C 0.36 (3) Peak Diode Recovery dv/dt Dv/dt 4.5 V/ns (4) Repetitive Pulse Avalanche Energy E 4.5 mJ AR (4) Single Pulse Avalanche Energy E 170 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 110 JA o C/W (1) Thermal Resistance, Junction-to-Case R 2.75 JC 1 Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd. MDI5N40 N-channel MOSFET 400V Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDI5N40TH -55~150 C TO-251(I-PAK) Tube Halogen Free o MDD5N40RH -55~150 C D-PAK Reel Halogen Free o Electrical Characteristics (Ta =25 C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 400 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 3.0 - 5.0 GS(th) DS GS D Drain Cut-Off Current I V = 400V, V = 0V - - 1 A DSS DS GS Gate Leakage Current I V = 30V, V = 0V - - 100 nA GSS GS DS Drain-Source ON Resistance R V = 10V, I = 1.7A 1.2 1.6 DS(ON) GS D Forward Transconductance g V = 30V, I = 1.7A - 2.0 - S fs DS D Dynamic Characteristics Total Gate Charge Q - 9 g (3) Gate-Source Charge Q V = 320V, I = 3.4A, V = 10V - 2.5 nC gs DS D GS Gate-Drain Charge Q - 4 gd Input Capacitance C - 290 iss Reverse Transfer Capacitance C V = 25V, V = 0V, f = 1.0MHz - 3 pF rss DS GS Output Capacitance C - 46 oss Turn-On Delay Time t - 12 d(on) Rise Time t - 25 r V = 10V, V = 200V, I = 3.4A, GS DS D (3) ns R = 25 G Turn-Off Delay Time t - 20 d(off) Fall Time t - 30 f Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source I - 3.4 - A S Diode Forward Current Source-Drain Diode Forward V I = 3.4A, V = 0V - 1.4 V SD S GS Voltage Body Diode Reverse Recovery t - 200 ns rr Time I = 3.4A, di/dt = 100A/s F Body Diode Reverse Recovery Q - 1.0 C rr Charge Note : 1. Pulse width is based on R JC & R JA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C. 3. I 3.4A, di/dt200A/us, V =50V, R =25, Starting TJ=25C SD DD g 4. L=26.0mH, I =3.4A, V =50V, R =25, Starting TJ=25C AS DD g 2 Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.