WWW.Microsemi .COM UPS340 UPS340 UPS340 3 A LOW Vf Schottky Barrier Rectifier KEY FEATURES DESCRIPTION High power surface mount In Microsemis new Powermite3 SMT In addition to its size advantages, package. package, these high efficiency ultrafast Powermite3 package features include a full Guard Ring die construction for rectifiers offer the power handing metallic bottom that eliminates the transient protection. capabilities previously found only in possibility of solder flux entrapment during Silicon Schottky rectifiers no much larger packages. They are ideal assembly, and a unique locking tab acts as reverse voltage recovery. for SMD applications that operate at an integral heat sink. Its innovative design Internal heat sink locking tabs high frequencies. makes this device ideal for use with Low forward voltage. automatic insertion equipment. Full metallic bottom eliminates flux entrapment Compatible with automatic IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM ELECTRICALS ELECTRICALS UPS340 3 A LOW Vf Schottky Barrier Rectifier ELECTRICAL PARAMETERS 25C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units I = 3 A , T =25 C Forward Voltage (Note 1) F j 0.46 0.50 I = 3 A , T =125 C 0.40 0.44 F j V V Fm I = 6 A , T =25 C 0.57 0.61 F j I = 6 A , T =125 C 0.54 0.58 F j Reverse Break Down Voltage (Note 1) V I = 0.5 mA 40 V BR R Reverse Current (Note1) V = 40V, T = 25 C 15 500 uA R j I V = 40V, T =100 C 10 20 mA rm R j Capacitance C V = 4 V F = 1 MH 180 pF T R Z Note: 1 Short duration test pulse used to minimize self heating effect. Copyright 2003 Microsemi Page 2 Rev. 0., 2003-02-12