VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from Secondary Breakdown The VN0104 Enhancement-mode (normally-off) transistors uses a vertical DMOS structure and a Low Power Drive Requirement well-proven silicon-gate manufacturing process. This Ease of Paralleling combination produces a device with the power Low C and Fast Switching Speeds ISS handling capabilities of bipolar transistors and the high Excellent Thermal Stability input impedance and positive temperature coefficient Integral Source-Drain Diode inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and High Input Impedance and High Gain thermally induced secondary breakdown. Applications Microchips vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications Motor Controls where very low threshold voltage, high breakdown Converters voltage, high input impedance, low input capacitance Amplifiers and fast switching speeds are desired. Switches Power Supply Circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Package Type 3-lead TO-92 (Top view) DRAIN SOURCE GATE See Table 3-1 for pin information. 2021 Microchip Technology Inc. DS20005976A-page 1VN0109 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-Source Voltage ...................................................................................................................................... BV DSS Drain-to-Gate Voltage ......................................................................................................................................... BV DGS Gate-to-Source Voltage ......................................................................................................................................... 20V Operating Ambient Temperature, T ................................................................................................... 55C to +150C A Storage Temperature, T ..................................................................................................................... 55C to +150C S Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. All DC parameters are 100% tested at 25C unless A otherwise stated. Pulse test: 300 s pulse, 2% duty cycle Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BV 90 V V = 0V, I = 1 mA DSS GS D Gate Threshold Voltage V 0.8 2.4 V V = V , I = 1 mA GS(th) GS DS D V = V , I = 1 mA GS DS D Change in V with Temperature V 3.8 5.5 mV/C GS(th) GS(th) (Note 1) Gate Body Leakage Current I 100 nA V = 20V, V = 0V GSS GS DS V = 0V, GS 1 A V = Maximum rating DS Zero-Gate Voltage Drain Current I V = 0.8 Maximum rating, DSS DS 100 A V = 0V, T = 125C GS A (Note 1) 0.5 1 A V = 5V, V = 25V GS DS On-State Drain Current I D(ON) 2 2.5 A V = 10V, V = 25V GS DS 3 5 V = 5V, I = 250 mA GS D Static Drain-to-Source On-State Resistance R DS(ON) 2.5 3 V = 10V, I = 1A GS D Change in R with Temperature R 0.7 1 %/C V = 10V, I = 1A (Note 1) DS(ON) DS(ON) GS D Note 1: Specification is obtained by characterization and is not 100% tested. DS20005976A-page 2 2021 Microchip Technology Inc.