Product Information

VN10KN3-G

VN10KN3-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 0.75A; 1W; TO92

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5899 ea
Line Total: USD 0.59

3662 - Global Stock
Ships to you between
Tue. 14 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4316 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 50
Multiples : 50

Stock Image

VN10KN3-G
Microchip

50 : USD 0.6666
500 : USD 0.5699
1000 : USD 0.5637
3000 : USD 0.5609
5000 : USD 0.5581
8000 : USD 0.5553
15000 : USD 0.5525
25000 : USD 0.5497

2135 - WHS 2


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

VN10KN3-G
Microchip

1 : USD 0.548
25 : USD 0.548
100 : USD 0.548

269 - WHS 3


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

VN10KN3-G
Microchip

1 : USD 0.549
25 : USD 0.549
100 : USD 0.549

356 - WHS 4


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

VN10KN3-G
Microchip

1 : USD 0.5317
25 : USD 0.5317
100 : USD 0.5317

3662 - WHS 5


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

VN10KN3-G
Microchip

1 : USD 0.5899
25 : USD 0.506
100 : USD 0.4658

647 - WHS 6


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1
Multiples : 1

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VN10KN3-G
Microchip

1 : USD 1.326
5 : USD 0.6786
25 : USD 0.5681
30 : USD 0.533
83 : USD 0.507

269 - WHS 7


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 20
Multiples : 1

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VN10KN3-G
Microchip

20 : USD 0.549

945 - WHS 8


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 975
Multiples : 975

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VN10KN3-G
Microchip

975 : USD 0.7755

4316 - WHS 9


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 100
Multiples : 50

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VN10KN3-G
Microchip

100 : USD 0.736
500 : USD 0.7212

1940 - WHS 10


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 63
Multiples : 1

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VN10KN3-G
Microchip

63 : USD 0.5882
100 : USD 0.5412
200 : USD 0.5206
500 : USD 0.4971
1000 : USD 0.4733

2135 - WHS 11


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 22
Multiples : 1

Stock Image

VN10KN3-G
Microchip

22 : USD 0.548

1691 - WHS 12


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 120
Multiples : 1

Stock Image

VN10KN3-G
Microchip

120 : USD 0.7655
250 : USD 0.7503

647 - WHS 13


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 134
Multiples : 1

Stock Image

VN10KN3-G
Microchip

134 : USD 0.696

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes a Free from secondary breakdown vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power handling capabilities of bipolar transistors Low C and fast switching speeds ISS and the high input impedance and positive temperature Excellent thermal stability coefficient inherent in MOS devices. Characteristic of all Integral source-drain diode MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. High input impedance and high gain Supertexs vertical DMOS FETs are ideally suited to a wide Applications range of switching and amplifying applications where very Motor controls low threshold voltage, high breakdown voltage, high input Converters impedance, low input capacitance, and fast switching speeds Amplifiers are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-92 () (mA) VN10K VN10KN3-G 60 5.0 750 For packaged products, -G indicates package is RoHS compliant (Green). Consult factory for die / wafer form part numbers. Refer to Die Specification VF21 for layout and dimensions. Absolute Maximum Ratings Pin Configuration Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS DRAIN Gate-to-source voltage 30V SOURCE O O Operating and storage temperature -55 C to +150 C Absolute Maximum Ratings are those values beyond which damage to the device GATE may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All TO-92 (N3) voltages are referenced to device ground. Product Marking SiVN YY = Year Sealed 10K WW = Week Sealed YYWW = Green Packaging Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VN10K Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 310 1.0 1.0 125 170 310 1.0 Notes: I (continuous) is limited by max rated T . (VN0106N3 can be used if an I (continuous) of 500mA is needed.) D j D O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 60 - - V V = 0V, I = 100A DSS GS D V Gate threshold voltage 0.8 - 2.5 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - -3.8 - mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 15V, V = 0V GSS GS DS - - 10 V = 0V, V = 45V GS DS I Zero gate voltage drain current A V = 0V, V = 45V, DSS GS DS - - 500 T = 125C A I On-state drain current 0.75 - - A V = 10V, V = 10V D(ON) GS DS - - 7.5 V = 5.0V, I = 200mA GS D R Static drain-to-source on-state resistance DS(ON) - - 5.0 V = 10V, I = 500mA GS D O R Change in R with temperature - 0.7 - %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 100 - - mmho V = 10V, I = 500mA FS DS D C Input capacitance - 48 60 ISS V = 0V, GS C Common source output capacitance - 16 25 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 2.0 5.0 RSS V = 15V, t Turn-on time - - 10 DD (ON) ns I = 600mA, D t Turn-off time - - 10 R = 25 (OFF) GEN V Diode forward voltage drop - 0.8 - V V = 0V, I = 500mA SD GS SD t Reverse recovery time - 160 - ns V = 0V, I = 500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT Pulse Generator 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t r d(OFF) f d(ON) VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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