VN10KN3-G Microchip

VN10KN3-G electronic component of Microchip
VN10KN3-G Microchip
VN10KN3-G MOSFETs
VN10KN3-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VN10KN3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. VN10KN3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. VN10KN3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 0.75A; 1W; TO92
Datasheet: VN10KN3-G Datasheet (PDF)
Price (USD)
1: USD 0.6413 ea
Line Total: USD 0.64 
Availability : 3289
  
Ship by Mon. 11 Aug to Wed. 13 Aug
QtyUnit Price
1$ 0.6413
25$ 0.528
100$ 0.4455

Availability 4947
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 94
Multiples : 50
QtyUnit Price
94$ 0.7466
500$ 0.5699
1000$ 0.5637
3000$ 0.5609
5000$ 0.5581
8000$ 0.5553
15000$ 0.5525
25000$ 0.5497


Availability 3520
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 339
Multiples : 1
QtyUnit Price
339$ 0.7679
410$ 0.6354
466$ 0.5586


Availability 1238
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 463
Multiples : 1
QtyUnit Price
463$ 0.5628
512$ 0.5079
552$ 0.4712


Availability 3066
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 338
Multiples : 1
QtyUnit Price
338$ 0.7694
409$ 0.6364
465$ 0.5593


Availability 1940
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.428
5$ 0.7308
25$ 0.6118
33$ 0.574
89$ 0.546


Availability 3289
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6413
25$ 0.528
100$ 0.4455


Availability 1940
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 342
Multiples : 1
QtyUnit Price
342$ 0.7617


Availability 4947
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 300
Multiples : 50
QtyUnit Price
300$ 0.9706
500$ 0.7979
1000$ 0.7893
3000$ 0.7852
5000$ 0.7814


Availability 1238
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 463
Multiples : 1
QtyUnit Price
463$ 0.5628
512$ 0.5079
552$ 0.4712


Availability 3520
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 339
Multiples : 1
QtyUnit Price
339$ 0.7679
410$ 0.6355
466$ 0.5586

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VN10KN3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VN10KN3-G and other electronic components in the MOSFETs category and beyond.

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Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes a Free from secondary breakdown vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power handling capabilities of bipolar transistors Low C and fast switching speeds ISS and the high input impedance and positive temperature Excellent thermal stability coefficient inherent in MOS devices. Characteristic of all Integral source-drain diode MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. High input impedance and high gain Supertexs vertical DMOS FETs are ideally suited to a wide Applications range of switching and amplifying applications where very Motor controls low threshold voltage, high breakdown voltage, high input Converters impedance, low input capacitance, and fast switching speeds Amplifiers are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-92 () (mA) VN10K VN10KN3-G 60 5.0 750 For packaged products, -G indicates package is RoHS compliant (Green). Consult factory for die / wafer form part numbers. Refer to Die Specification VF21 for layout and dimensions. Absolute Maximum Ratings Pin Configuration Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS DRAIN Gate-to-source voltage 30V SOURCE O O Operating and storage temperature -55 C to +150 C Absolute Maximum Ratings are those values beyond which damage to the device GATE may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All TO-92 (N3) voltages are referenced to device ground. Product Marking SiVN YY = Year Sealed 10K WW = Week Sealed YYWW = Green Packaging Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VN10K Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 310 1.0 1.0 125 170 310 1.0 Notes: I (continuous) is limited by max rated T . (VN0106N3 can be used if an I (continuous) of 500mA is needed.) D j D O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 60 - - V V = 0V, I = 100A DSS GS D V Gate threshold voltage 0.8 - 2.5 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - -3.8 - mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 15V, V = 0V GSS GS DS - - 10 V = 0V, V = 45V GS DS I Zero gate voltage drain current A V = 0V, V = 45V, DSS GS DS - - 500 T = 125C A I On-state drain current 0.75 - - A V = 10V, V = 10V D(ON) GS DS - - 7.5 V = 5.0V, I = 200mA GS D R Static drain-to-source on-state resistance DS(ON) - - 5.0 V = 10V, I = 500mA GS D O R Change in R with temperature - 0.7 - %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 100 - - mmho V = 10V, I = 500mA FS DS D C Input capacitance - 48 60 ISS V = 0V, GS C Common source output capacitance - 16 25 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 2.0 5.0 RSS V = 15V, t Turn-on time - - 10 DD (ON) ns I = 600mA, D t Turn-off time - - 10 R = 25 (OFF) GEN V Diode forward voltage drop - 0.8 - V V = 0V, I = 500mA SD GS SD t Reverse recovery time - 160 - ns V = 0V, I = 500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT Pulse Generator 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t r d(OFF) f d(ON) VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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