VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power handling capabilities of bipolar transistors Low C and fast switching speeds ISS and the high input impedance and positive temperature Excellent thermal stability coefcient inherent in MOS devices. Characteristic of all Integral source-drain diode MOS structures, this device is free from thermal runaway and High input impedance and high gain thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very Motor controls low threshold voltage, high breakdown voltage, high input Converters impedance, low input capacitance, and fast switching speeds Ampliers are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package Options DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-92 () (A) VN0606 VN0606L-G 60 3.0 1.5 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN Absolute Maximum Ratings SOURCE Parameter Value GATE Drain-to-source voltage BV DSS TO-92 (L) Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 30V O O Operating and storage temperature -55 C to +150 C Si VN YY = Year Sealed O Soldering temperature* 300 C 0 6 0 6 L WW = Week Sealed YYWW = Green Packaging Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not Package may or may not include the following marks: Si or implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-92 (L) * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVN0606 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C O O C ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 330 1.6 1.0 125 170 330 1.6 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 60 - - V V = 0V, I = 10A DSS GS D V Gate threshold voltage 0.8 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D I Gate body leakage - - 100 nA V = 30V, V = 0V GSS GS DS - - 10 V = 0V, V = 50V GS DS I Zero gate voltage drain current A V = 0V, V = 50V, DSS GS DS - - 500 T = 125C A I On-state drain current 1.5 - - A V = 10V, V = 10V D(ON) GS DS R Static drain-to-source on-state resistance - - 3.0 V = 10V, I = 1.0A DS(ON) GS D G Forward transductance 170 - - mmho V = 10V, I = 500mA FS DS D C Input capacitance - - 50 ISS V = 0V, GS C Common source output capacitance - - 25 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 5.0 RSS V = 25V, t Turn-on delay time - - 10 DD (ON) ns I = 600mA, D t Turn-off delay time - - 10 R = 25 (OFF) GEN V Diode forward voltage drop - 0.85 - V V = 0V, I = 470mA SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE 10% GENERATOR OUTPUT 0V t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) f V DD D.U.T. 10% 10% OUTPUT INPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2