VN2110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from Secondary Breakdown The VN2110 low-threshold, Enhancement-mode (normally-off) transistor utilizes a vertical DMOS Low Power Drive Requirement structure and a well-proven silicon-gate manufacturing Ease of Paralleling process. This combination produces a device with the Low CISS and Fast Switching Speeds power handling capabilities of bipolar transistors and High Input Impedance and High Gain the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of Applications all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Motor Controls Microchips vertical DMOS FETs are ideally suited for a Converters wide range of switching and amplifying applications Amplifiers where very low threshold voltage, high breakdown Switches voltage, high input impedance, low input capacitance Power Supply Circuits and fast switching speeds are desired. Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Package Type 3-lead SOT-23 (Top view) DRAIN SOURCE GATE See Table 3-1 for pin information. 2021 Microchip Technology Inc. DS20005793A-page 1VN2110 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-Source Voltage ...................................................................................................................................... BV DSS Drain-to-Gate Voltage ......................................................................................................................................... BV DGS Gate-to-Source Voltage.......................................................................................................................................... 20V Operating Ambient Temperature, T ................................................................................................... 55C to +150C A Storage Temperature, T ..................................................................................................................... 55C to +150C S Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. All DC parameters are 100% tested at 25C unless A otherwise stated. Pulse test: 300 s pulse, 2% duty cycle Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BV 100 V V = 0V, I = 1 mA DSS GS D Gate Threshold Voltage V 0.8 2.4 V V = V , I = 1 mA GS(th) GS DS D Change in V with Temperature V 3.8 5.5 mV/C V = V , I = 1 mA (Note 1) GS(th) GS(th) GS DS D Gate Body Leakage Current I 0.1 100 nA V = 20V, V = 0V GSS GS DS V = 0V, GS 1 A V = Maximum rating DS Zero-Gate Voltage Drain Current I DSS V = 0.8 Maximum rating, DS 100 A V = 0V, T = 125C (Note 1) GS A On-State Drain Current I 0.6 A V = 10V, V = 25V D(ON) GS DS 4.5 6 V = 5V, I = 75 mA Static Drain-to-Source On-State GS D R DS(ON) Resistance 3 4 V = 10V, I = 500 mA GS D V = 10V, I = 500 mA GS D Change in R with Temperature 0.7 1 %/C DS(ON) RDS(ON) (Note 1) Note 1: Specification is obtained by characterization and is not 100% tested. DS20005793A-page 2 2021 Microchip Technology Inc.