Product Information

VN2210N3-G

VN2210N3-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 8A; 740mW; TO92

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

16: USD 2.3236 ea
Line Total: USD 37.1776

1201 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 16  Multiples: 1
Pack Size: 1
Availability Price Quantity
956 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

VN2210N3-G
Microchip

1 : USD 2.4495
25 : USD 2.093
100 : USD 1.932

1201 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 16
Multiples : 1

Stock Image

VN2210N3-G
Microchip

16 : USD 2.3236
50 : USD 1.8824
100 : USD 1.75
500 : USD 1.5238
1000 : USD 1.5159

965 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 5
Multiples : 1

Stock Image

VN2210N3-G
Microchip

5 : USD 2.2528

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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VN2210 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from Secondary Breakdown VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Low Power Drive Requirement Metal-Oxide Semiconductor (DMOS) structure and a Ease of Paralleling well-proven silicon gate manufacturing process. This Low C and Fast Switching Speeds ISS combination produces a device with the power Excellent Thermal Stability handling capabilities of bipolar transistors as well as Integral Source-drain Diode the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of High Input Impedance and High Gain all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Applications Vertical DMOS Field-Effect Transistors (FETs) are Motor Controls ideally suited to a wide range of switching and Converters amplifying applications where high breakdown voltage, Amplifiers high input impedance, low input capacitance and fast switching speeds are desired. Switches Power Supply Circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.) Package Types TO-92 TO-39 DRAIN GATE SOURCE SOURCE DRAIN GATE 2016 Microchip Technology Inc. DS20005559A-page 1VN2210 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-source Voltage ........................................................................................................................................BV DSS Drain-to-gate Voltage ............................................................................................................................................BV DGS Gate-to-source Voltage ........................................................................................................................................... 20V Operating and Storage Temperatures ................................................................................................. 55C to +150C Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. A Parameters Sym. Min. Typ. Max. Units Conditions DC PARAMETERS (Note 1 unless otherwise specified) 100 V V = 0V, I = 10 mA Drain-to-source Breakdown Voltage BV DSS GS D Gate Threshold Voltage V 0.8 2.4 V V = V , I = 10 mA GS(th) GS DS D Change in V with Temperature V 4.3 5.5 mV/C V = V , I = 10 mA (Note 2) GS(th) GS(th) GS DS D 100 nA V = 20V, V = 0V Gate Body Leakage Current I GSS GS DS 50 A V = 0V, V = Maximum rating GS DS Zero Gate Voltage Drain Current I V = 0.8 maximum rating, DSS DS 10 mA V = 0V, T = 125C (Note 2) GS A 3 4.5 V = 5V, V = 25V GS DS ON-State Drain Current I A D(ON) = 10V, V = 25V 8 17 V GS DS Static Drain-to-source ON-State Resis- 0.4 0.5 V = 5V, I = 1A GS D R DS(ON) tance 0.27 0.35 V = 10V, I = 4A GS D with Temperature R 0.85 1.2 %/C V = 10V, I = 4A (Note 2) Change in R DS(ON) DS(ON) GS D AC PARAMETERS (Note 2) Forward Transconductance G 1200 mmho V = 25V, I = 2A FS DS D 300 500 Input Capacitance C ISS Common Source Output Capacitance C 125 200 pF V = 0V, V = 25V, f = 1 MHz OSS GS DS Reverse Transfer Capacitance C 50 65 RSS 10 15 Turn-on Time t d(ON) Rise Time t 10 15 V = 25V, I = 2A, r DD D ns Turn-off Time t 50 65 R = 10 GEN d(OFF) 30 50 Fall Time t f DIODE PARAMETERS Diode Forward Voltage Drop V 1 1.6 V V = 0V, I = 4A (Note 1) SD GS SD 500 ns V = 0V, I = 1A (Note 2) Reverse Recovery Time t rr GS SD Note 1: All DC parameters are 100% tested at 25C unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle) 2: Specification is obtained by characterization and is not 100% tested. DS20005559A-page 2 2016 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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