Product Information

VN2106N3-G

Product Image X-ON

Datasheet
MOSFET N Trench 60V 300mA (Tj) 2.4V @ 1mA 6 Ω @ 75mA,5V TO-92 (TO-92-3) RoHS

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5961 ea
Line Total: USD 0.5961

25327 - Global Stock
Ships to you between
Thu. 22 Jun to Mon. 26 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23527 - Global Stock


Ships to you between Thu. 22 Jun to Mon. 26 Jun

MOQ : 1
Multiples : 1

Stock Image

VN2106N3-G
Microchip

1 : USD 0.5778
25 : USD 0.481
100 : USD 0.4113

     
Manufacturer
Microchip
Product Category
MOSFET
RoHS - XON
Y Icon ROHS
Id - Continuous Drain Current
300 mA
Vds - Drain-Source Breakdown Voltage
60 V
Rds On - Drain-Source Resistance
4 Ohms
Transistor Polarity
N - Channel
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1 W
Mounting Style
Through Hole
Package / Case
TO - 92
Packaging
Bulk
Technology
Si
Number of Channels
1 Channel
Vgs - Gate-Source Voltage
20 V
Channel Mode
Enhancement
Configuration
Single
Brand
Microchip
Continuous Drain Current
300 mA
Drain-Source Breakdown Voltage
60 V
Gate-Source Breakdown Voltage
+/- 20 V
Power Dissipation
1 W
Rds On
4 Ohms
Factory Pack Quantity :
1000
Typical Turn-Off Delay Time
6 ns
Height
5.33 mm
Length
5.21 mm
Transistor Type
1 N - Channel
Type
Fet
Width
4.19 mm
Cnhts
8541210000
Fall Time
5 ns
Hts Code
8541210095
Mxhts
85412101
Product Type
Mosfet
Rise Time
5 ns
Subcategory
Mosfets
Taric
8541210000
Typical Turn-On Delay Time
3 ns
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VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex VN2106 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertexs well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low C and fast switching speeds ISS power handling capabilities of bipolar transistors, and the High input impedance and high gain high input impedance and positive temperature coefcient inherent in MOS devices. Characteristic of all MOS Applications structures, this device is free from thermal runaway and Motor controls thermally-induced secondary breakdown. Converters Ampliers Supertexs vertical DMOS FETs are ideally suited to a Switches wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high Power supply circuits input impedance, low input capacitance, and fast switching Drivers (relays, hammers, solenoids, lamps, speeds are desired. memories, displays, bipolar transistors, etc.) Ordering Information R Package Option DS(ON) BV /BV DSS DGS Device (max) (V) TO-92 () VN2106 VN2106N3-G 60 4.0 -G indicates package is RoHS compliant (Green) Absolute Maximum Ratings Pin Conguration Parameter Value Drain-to-Source voltage BV DSS DRAIN Drain-to-Gate voltage BV DGS SOURCE Gate-to-Source voltage 20V GATE Operating and storage temperature -55C to +150C TO-92 (N3) Soldering temperature* +300C Product Marking Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level S i V N YY = Year Sealed may affect device reliability. All voltages are referenced to device ground. 2 1 0 6 WW = Week Sealed Y Y W W * Distance of 1.6mm from case for 10 seconds. = Green Packaging Package may or may not include the following marks: Si or TO-92 (N3) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVN2106 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 300 1.0 1.0 125 170 300 1.0 Notes: I (continuous) is limited by max rated T . D j Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 60 - - V V = 0V, I = 1.0mA DSS GS D V Gate threshold voltage 0.8 - 2.4 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - -3.8 -5.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - 0.1 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 V = 0V, V = Max Rating GS DS I Zero gate voltage drain current A V = 0.8 Max Rating, DSS DS - - 100 O V = 0V, T = 125 C GS A I On-state drain current 0.6 - - A V = 10V, V = 25V D(ON) GS DS - 4.5 6.0 V = 5.0V, I = 75mA GS D R Static drain-to-source on-state resistance DS(ON) - 3.0 4.0 V = 10V, I = 500mA GS D O R Change in R with temperature - 0.7 1.0 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transconductance 150 400 - mmho V = 25V, I = 500mA FS DS D C Input capacitance - 35 50 ISS V = 0V, GS C Common source output capacitance - 13 25 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 4.0 5.0 RSS t Turn-on delay time - 3.0 5.0 d(ON) V = 25V, t Rise time - 5.0 8.0 DD r ns I = 600mA, D t Turn-off delay time - 6.0 9.0 d(OFF) R = 25 GEN t Fall time - 5.0 8.0 f V Diode forward voltage drop - 1.2 1.8 V V = 0V, I = 600mA SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = 600mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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