X-On Electronics has gained recognition as a prominent supplier of BC817-40-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-40-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC817-40-TP Micro Commercial Components (MCC)

BC817-40-TP electronic component of Micro Commercial Components (MCC)
BC817-40-TP Micro Commercial Components (MCC)
BC817-40-TP Bipolar Transistors - BJT
BC817-40-TP  Semiconductors

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See Product Specifications
Part No. BC817-40-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 310 mW Surface Mount SOT-23
Datasheet: BC817-40-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
21000: USD 0.0128 ea
Line Total: USD 268.8 
Availability - 392850
Ship by Wed. 21 May to Tue. 27 May
MOQ: 21000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
392850
Ship by Wed. 21 May to Tue. 27 May
MOQ : 21000
Multiples : 3000
21000 : USD 0.0128
30000 : USD 0.0125
75000 : USD 0.0117
120000 : USD 0.0113

562
Ship by Wed. 28 May to Mon. 02 Jun
MOQ : 20
Multiples : 20
20 : USD 0.0426
200 : USD 0.0342
600 : USD 0.0296
3000 : USD 0.0166
9000 : USD 0.015
21000 : USD 0.014
39000 : USD 0.0139

11984
Ship by Mon. 19 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 0.14
10 : USD 0.0924
25 : USD 0.0728
100 : USD 0.0476
847 : USD 0.0224

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC817-40-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-40-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817-16 THRU BC817-40 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Small Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Signal Transistor 300mW Maximum Ratings SOT-23 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 A D Thermal Resistance: 417 /W Junction to Ambient B C Parameter Symbol Rating Unit V Collector-Base Voltage 50 V CBO F E V Collector-Emitter Voltage 45 V CEO Emitter-Base Voltage V 5 V EBO G H J Collector Current I 500 mA C L I Peak Collector Current 1000 mA CM K ( Note2) P 300 mW Power Dissipation Ts=50 C DIMENSIONS INCHES MM Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, DIM NOTE MIN MAX MIN MAX <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. A 0.110 0.120 2.80 3.04 2 2. Device mounted on Ceramic Substrate 0.7mm X 2.5cm area B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 Internal Structure E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 C G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 Marking: K 0.014 0.020 0.35 0.51 B E L 0.007 0.020 0.20 0.50 BC817-16: 6A BC817-25: 6B Suggested Solder Pad Layout BC817-40: 6C 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COMBC817-16 THRU BC817-40 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =10A, I =0 Collector-Base Breakdown Voltage 50 V (BR)CBO C E (Note3) Collector-Emitter Breakdown Voltage V 45 V I =10mA, I =0 (BR)CEO C B V I =1A, I =0 Emitter-Base Breakdown Voltage 5 V (BR)EBO E C I V =45V, I =0 Collector Cutoff Current 0.1 CBO A CB E Emitter-Base Cutoff Current I 0.1 V =4V, I =0 A EBO EB C (Note3) 100 600 V =1V, I =100mA h CE C DC Current Gain FE1 V =1V, I =500mA h 40 CE C FE2 V 0.7 V I =500mA, I =50mA Collector-Emitter Saturation Voltage CE(sat) C B I =500mA, I =50mA Base-Emitter Saturation Voltage V 1.2 V C B BE(sat) Base-Emitter Voltage V 1.2 V V =1V, I =500mA BE CE C Collecter capactiance C 10 pF V =10V, f=1MHz, ob CB Transition Frequency f 100 MHz V =5V, I =10mA, f=100MHz T CE C Note: 3. Pulse Width 300s, Duty Cycle 2.0% CLASSIFICATION OF h FE (1) Rank BC817-16 BC817-25 BC817-40 Range 100-250 160-400 250-600 Rev.3-3-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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