M C C
R
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
SI3134K L
Features
Lead Free Product is Acquired
Halogen free available upon request by adding suffix-H
Epoxy meets UL 94 V-0 flammability rating
N-Channel MOSFET
Moisture Sensitivity Level 1
Equivalent Circuit
Operated at Low Logic Level Gate Drive
N-Channel Switch with Low RDS(on)
Surface Mount Package
Marking :34
SOT- 883
Absolute maximum ratings @ 25
Symbol Parameter Value Unit
V Drain-source Voltage 20 V
DS
V Gate-source Voltage V
GS 12
D
(1)
A
I Continuous Drain Current 0.75 A
D
B
I Pulsed Drain Current 1.8 A
DM
(2)
P Total Power Dissipation 100 mW
D
C
T Operating Junction Temperature -55 to +150
J
E
T Storage Temperature -55 to +150
STG
L
N
M
T Lead Temperature for Soldering Purposes 260 M
L
RthJA Thermal Resistance fromJunction to Ambient 1250 /W
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
K
F
G
Symbol Parameter Min Typ Max Units
1. GATE
STATIC PARAMETERS
2. SOURCE
H
V(BR)DSS Drain-Source Breakdown Voltage
J
3. DRAIN
20 --- --- Vdc
(V =0Vdc, I =250 Adc)
GS D
V Gate-Threshold Voltage
GS(th) DIMENSIONS
0.35 --- 1.1 Vdc
(V =V , I =250uAdc)
DS GS D
MM
INCHES
I Gate-body Leakage
GSS
DIM
--- --- 20 uA
MAX NOTE
MIN MAX MIN
(V =0Vdc, V =10Vdc)
DS GS
A 0.018 0.022 0.450 0.550
I Zero Gate Voltage Drain Current
DSS
--- --- 1 uAdc
0.000 0.004 0.010 0.100
B
(V =20Vdc, V =0Vdc)
DS GS
0.037 0.041
C 0.950 1.050
V Diode Forward Voltage
SD
0.022 0.026
--- --- 1.2 Vdc 0.550 0.650
D
(I =0.15A,VGS=0V
S
E 0.018REF. 0.450REF.
r Drain-Source On-Resistance
DS(on)
0.450REF.
F 0.018REF.
(V =4.5Vdc, I =0.65Adc) --- --- 0.38
GS D
G 0.011 0.015 0.270 0.370
(V =2.5Vdc, I =0.55Adc) --- --- 0.45
GS D
0.004 0.008 0.100 0.200
H
(V =1.8Vdc, I =0.45Adc) --- --- 0.80
GS D
J 0.025REF. 0.635REF.
0.300 0.400
0.012 0.016
Forward transconductance K
g
FS
--- 1.6 --- S 0.008 0.012 0.200 0.300
L
(V =10Vdc, I =0.8Adc)
DS D
0.002REF. 0.050REF.
M
(4)
DYNAMIC PARAMETERS
N 0.011 0.015 0.270 0.370
C Input Capacitance --- 79 120
iss
V =16Vdc,
DS
C Output Capacitance --- 13 20
OSS
V =0Vdc pF
GS
C Reverse Transfer
rSS
f=1MHz
--- 9 15
capacitance
(4)
SWITCHING PARAMETERS
(3)
t Turn-on Time --- 6.7 ---
d(on)
V =4.5V, V =10V,
GS DS
(3)
t Turn-off Time
d(off) --- 17.3 ---
I =500mA
D
ns
ns
(3)
t R =10
r Rise Time GEN --- 4.8 ---
(3)
t
r Fall Time --- 7.4 ---
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
2.Pulse est Pulse : width=300s, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Graranted y designnot subject to producting.
www.mccsemi.com
2016/01/30
Revision: A
1 of 3
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M C C
R
SI3 131KL
Micro Commercial Components
Output Characteristics
Transfer C haracteristics
5.0 4.0
V =4V,5V
GS
V =3V
T =25 DS
a
4.5
V =3V 3.5 Pulsed
Pulsed GS
4.0
3.0
V =2.5V
GS
3.5
2.5
T =25
T =100
a
3.0 a
V =2V
GS
2.5 2.0
2.0
1.5
1.5
1.0
V =1.5V
1.0
GS
0.5
0.5
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 23 4
DRAIN TO SOURCE VOLTAGE V (V) GATE TO SOURCE VOLTAGE V (V)
DS GS
R V
R I
DS(ON) GS
DS(ON) D
500 800
T =25 Pulsed
a
Pulsed
700
450
V =1.8V
I =0.65A
GS
D
600
400
500
350
T =100
V =2.5V a
GS
400
300
300
V =4.5V
GS
250
T =25
200
a
200 100
0.1 0.2 0.3 0.4 0.50.6 0.7 0.8 0.9 1.0 1.1 1.2 12 3 4 5
DRAIN CURRENT I (A) GATE GATE TO SOURCE VOLTAGE (V)
D GS
Threshold Voltage
I V
S SD
2 0.8
Pulsed
1
0.7
0.6
I =250uA
D
0.5
0.1
T =100
a T =25
a
0.4
0.3
0.01 0.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125
SOURCE TO DRAIN VOLTAVOLTAGE (V) JUNCTION TEMPERATURE T ( )
SD j
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2016/01/30
Revision: A
ON-RESISTANCE R (m)
DRAIN CURRENT I (A)
DS(ON)
D
SOURCE CURRENT I (A)
S
DRAIN CURRENT I (A)
D
ON-RESISTANCE R (m)
DS(ON)
THRESHOLD VOLTAGE V (V)
TH