SICU0260B Features Zero Reverse Recovery Current Positive Temperature Coefficient 2 Amp High-Speed Switching Moisture Sensitivity Level 1 Silicon Carbide Epoxy Meets UL 94 V-0 Flammability Rating Schottky Barrier Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant(Note 1) Suffix designates Rectifier RoHS Compliant. See ordering information) Benefits 650 Volts Temperature-Independent Performance Essentially No Switching Loss Higher Efficiency Reduced EMI Reduction of Heat Sink Requirements Applications J Switching Power Supply H Power Factor Correction C 1 O Solar Inverter 2 4 F E I 3 Maximum Ratings M K V Operating Junction Temperature Range: -55C to +175C Q Storage Temperature Range: -55C to +175C A Thermal Resistance: 4.55C/W Junction to Case G L D B MCC Device Marking Part Number SICU0260B SICU0260B DIMENSIONS INCHES MM DIM NOTE Peak Repetitive Reverse MIN MAX MIN MAX V 650V RRM Voltage A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 Surge Peak Reverse Voltage V 650V C 0.026 0.034 0.66 0.86 RSM D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 V DC Reverse Voltage 650V DC F 0.201 0.215 5.10 5.46 G 0.190 4.83 TYP. H 0.236 0.244 6.00 6.20 Average Forward Current I 2A T =160C F C I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 T =25C, t =10ms, TYP. C p K 0.114 2.90 Peak Forward Surge Current I 22A FSM L 0.055 0.067 1.40 1.70 Half Sine Pulse M 0.063 1.60 TYP. T =25C, t =10ms, Repetitive Peak Forward C p O 0.043 0.051 1.10 1.30 I 13A FRM Current Half Sine Pulse Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. Power Dissipation P 33W T =25C D C Note:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7a. *OUFSOBM 4USVDUVSF PIN 1,2,4 PIN 3 Rev.3-2- 12082020 1/4 MCCSEMI.COM 3SICU0260B Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Conditions Typ. Max. Units I =2A, T =25C 1.4 1.6 V F J Forward Voltage V F I =2A, T =175C 1.8 2.5 V F J V =650V, T =25C 1 10 A R J Reverse Leakage Current I R V =650V, T =175C 10 50 A R J Total Capacitive Charge Q V =400V 5.8 nC C R V =0V, f=1MHz 175 pF R Total capacitance C V =200V, f=1MHz 10.5 pF R V =400V, f=1MHz 8.5 pF R Capacitance Stored Energy E V =400V 0.8 J C R Curve Characteristics Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Leakage Characteristics 4 50 45 40 3 35 30 25C 25 2 75C 175C 125C 125C 20 175C 75C 25C 15 1 10 5 0 0 0 100 200 300 400 500 600 700 800 900 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V (V) V (V) R F Rev.3-2-12082020 2/4 MCCSEMI.COM I (A) F I ( A) R