Product Information

M29W640GB70ZA6F

M29W640GB70ZA6F electronic component of Micron

Datasheet
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 70ns 48-Pin TFBGA T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 1.7854 ea
Line Total: USD 4463.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500
2500 : USD 1.7854
5000 : USD 1.6832
10000 : USD 1.6318

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500
2500 : USD 2.1938

0 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500
2500 : USD 1.7854
5000 : USD 1.6832
10000 : USD 1.6318

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
Deleted
LoadingGif

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M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block) 3 V supply flash memory Feature Supply voltage V = 2.7 to 3.6 V for program/erase/read CC V =12 V for fast program (optional) TSOP48 (NA) PP TSOP56 (NB) 12 x 20 mm 14 x 20 mm(1) Asynchronous random/page read FBGA Page width: 4 words FBGA BGA Page access: 25 ns Random access: 60 ns, 70 ns, 90 ns TBGA64 (ZF) FBGA64 (ZS) TFBGA48 (ZA) 11 x 13 mm 10 x 13 mm(1) 6x8mm Fast program commands 2-word/4-byte program (without V =12 V) 1. Packages only available upon request. PP 4-word/8-byte program (with V =12 V) PP RoHS compliant packages 16-word/32-byte write buffer 128-word extended memory block Programming time Low power consumption:standby and 10 s per byte/word typical automatic standby Chip program time: 10 s (4-word program) Unlock Bypass Program command Memory organization Faster production/batch programming M29W640GH/L: Common flash interface: 64-bit security code 128 main blocks, 64 Kbytes each M29W640GT/B V /WP pin for fast program and write protect PP Eight 8-Kbyte boot blocks (top or bottom) Temporary block unprotection mode 127 main blocks, 64 Kbytes each 100,000 program/erase cycles per block Program/erase controller Electronic signature Embedded byte/word program algorithms Manufacturer code: 0020h Program/erase suspend and resume Device code (see Table 1) Read from any block during program Automotive Certified Parts Available suspend Read and program another block during erase suspend Table 1. Device summary Root part number Device code M29W640GH: uniform, last block protected by V /WP 227Eh + 220Ch + 2201h PP M29W640GL: uniform, first block protected by V /WP 227Eh + 220Ch + 2200h PP M29W640GT: top boot blocks 227Eh + 2210h + 2201h M29W640GB: bottom boot blocks 227Eh + 2210h + 2200h October 2009 Rev 11 1/90 www.numonyx.com 1Contents M29W640GH, M29W640GL, M29W640GT, M29W640GB Contents 1 Description . 7 2 Signal descriptions . 14 2.1 Address Inputs (A0-A21) . 14 2.2 Data Inputs/Outputs (DQ0-DQ7) . 14 2.3 Data Inputs/Outputs (DQ8-DQ14) 14 2.4 Data Input/Output or Address Input (DQ15A1) . 14 2.5 Chip Enable (E) 14 2.6 Output Enable (G) 14 2.7 Write Enable (W) . 15 2.8 V /Write Protect (V WP) . 15 PP PP/ 2.9 Reset/Block Temporary Unprotect (RP) 17 2.10 Ready/Busy Output (RB) . 17 2.11 Byte/Word Organization Select (BYTE) 17 2.12 V supply voltage 18 CC 2.13 V ground 18 SS 3 Bus operations 19 3.1 Bus read 19 3.2 Bus write 19 3.3 Output disable . 19 3.4 Standby 19 3.5 Automatic standby 20 3.6 Special bus operations . 20 3.6.1 Electronic signature 20 3.6.2 Block protect and chip unprotect 20 4 Command interface . 23 4.1 Standard commands 23 4.1.1 Read/Reset command 23 4.1.2 Auto Select command 23 4.1.3 Read CFI Query command 24 2/90

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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