GALI-4F+ Mini-Circuits

GALI-4F+ electronic component of Mini-Circuits
GALI-4F+ Mini-Circuits
GALI-4F+ RF Amplifier
GALI-4F+  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GALI-4F+ RF Amplifier across the USA, India, Europe, Australia, and various other global locations. GALI-4F+ RF Amplifier are a product manufactured by Mini-Circuits. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No. GALI-4F+
Manufacturer: Mini-Circuits
Category: RF Amplifier
Description: RF Amplifier ML AMPL SURF MT RoHS
Datasheet: GALI-4F+ Datasheet (PDF)
Price (USD)
1: USD 4.3974 ea
Line Total: USD 4.4 
Availability : 21
  
Ship by Mon. 08 Sep to Thu. 11 Sep
QtyUnit Price
1$ 4.3974
10$ 2.8917
30$ 2.8415
100$ 2.7912

Availability 21
Ship by Mon. 08 Sep to Thu. 11 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.3974
10$ 2.8917
30$ 2.8415
100$ 2.7912

   
Manufacturer
Product Category
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Category
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GALI-4F+ from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GALI-4F+ and other electronic components in the RF Amplifier category and beyond.

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Surface Mount Monolithic Ampliefi r DC-4 GHz Product Features InGaP HBT microwave amplifier Miniature SOT-89 package Internally Matched to 50 Ohms Frequency range, DC to 4 GHz Generic photo used for illustration purposes only Output power, 15.3 dBm typ. Gali 4F+ Excellent package for heat dissipation, exposed metal bottom Low thermal resistance for high reliability CASE STYLE: DF782 Aqueous washable Protected by US Patent 6,943,629 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Typical Applications Cellular PCS Communication receivers & transmitters General Description Gali 4F+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable perfor - mance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Transient Protected Darling- ton configuration and is fabricated using InGaP HBT technology. Expected MTTF is 10,000 years at 85C case temperature. Gali 4F+ is designed to be rugged for ESD and supply switch-on transients. simplified schematic and pin description RF-OUT and DC-IN 3 RF-OUT & DC-IN RF IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen RF IN 1 for the frequency of operation. RF output and bias pin. DC voltage is present on this pin therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias RF-OUT and DC-IN 3 without loss of RF signal due to the bias connection, as shown in Recommended Application Circuit. Connections to ground. Use via holes as shown in Suggested Layout for PCB GND 2,4 Design to reduce ground path inductance for best performance. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. REV. S B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. M151107 C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled D60129 to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp EE-7974Q GALI-4F+ RS/YB/FL Mini-Circuits 200316 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 1 of 4Monolithic InGaP HBT MMIC Amplifier Gali 4F+ Electrical Specifications at 25C and 50mA, unless noted Parameter Min. Typ. Max. Units Frequency Range* DC 4 GHz Gain f=0.1 GHz 14.3 dB f=1 GHz 14.0 f=2 GHz 11 13.4 f=3 GHz 13.0 f=4 GHz 12.3 f=6 GHz 13.2 Input Return Loss f= DC to 3 GHz 21 dB f= 3 to 4 GHz 21 Output Return Loss f= DC to 3 GHz 14 dB f= 3 to 4 GHz 11 Output Power 1 dB compression f=1 GHz 13.8 15.3 dBm Output IP3 f=1 GHz 34 dBm Noise Figure f=1 GHz 4.0 dB Recommended Device Operating Current 50 mA Device Operating Voltage 4.0 4.4 5.0 V Device Voltage Variation vs. Temperature at 50 mA -3.1 mV/C Device Voltage Variation vs. Current at 25C 10.0 mV/mA 1 Thermal Resistance, junction-to-case 93 C/W *Guaranteed specification DC-4 GHz. Low frequency cut off determined by external coupling capacitors. Absolute Maximum Ratings Parameter Ratings Operating Temperature* -45C to 85C Storage Temperature -65C to 150C Operating Current 65mA Input Power 20dBm Note: Permanent damage may occur if any of these limits are exceeded. These ratings are not intended for continuous normal operation. 1 Case is defined as ground leads. *Based on typical case temperature rise 3C above ambient. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 2 of 4

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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