MNA-4W+ Mini-Circuits

MNA-4W+ electronic component of Mini-Circuits
MNA-4W+ Mini-Circuits
MNA-4W+ RF Amplifier
MNA-4W+  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MNA-4W+ RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MNA-4W+ RF Amplifier are a product manufactured by Mini-Circuits. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No. MNA-4W+
Manufacturer: Mini-Circuits
Category: RF Amplifier
Description: RF Amplifier ML AMPL SURF MT RoHS
Datasheet: MNA-4W+ Datasheet (PDF)
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.294
10$ 3.6868
100$ 3.3554
200$ 3.024
400$ 2.7133
1000$ 2.2887
2400$ 2.1748
5000$ 2.0816
10000$ 2.0195
N/A

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MNA-4W+ from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MNA-4W+ and other electronic components in the RF Amplifier category and beyond.

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HIGH DIRECTIVITY Monolithic Amplifier MNA-4W+ 50 0.5 to 4.5 GHz THE BIG DEAL y Integrated matching, DC Blocks and bias circuits y High directivity, 19-32 dB typ.= y Excellent Active Directivity y Operates over 2.8-5V Generic photo used for illustration purposes only y Choice of supply voltage, +2.8V to +5V CASE STYLE: DQ849 y Micro-miniature size .120X.120 y Internal DC blocking at RF input and output +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site y Output power, up to +19 dBm typ. for RoHS Compliance methodologies and qualifications y Aqueous washable APPLICATIONS y Buffer amplifier y Cellular infrastructure y Communications satellite y Defense PRODUCT OVERVIEW MNA-4W+ is a wideband PHEMT based MMIC amplifier with high active Directivity. MNA integrates the entire matching network and majority of the bias circuit inside the package, reducing the need for complicated external circuits. This approach makes the MNA amplifier extremely straightforward to use. This design operates on a single 2.8 to 5V supply, is well matched for 50 and comes in a tiny, low profile 3x3mm 8-lead MCLP package accommodating dense circuit board layouts. KEY FEATURES Feature Advantages Excellent Active Directivity (Isolation- Gain) Ideal for use as a buffer amplifier minimizing interaction of adjacent circuits 19-35 dB Integrates DC blocks and RF choke Minimizes external components, component count and circuit area. Amplifier can be used at low voltage such as +3V or standard +5V. Single +2.8 to +5V operation +5V operation results in higher P1dB and OIP3. Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent 3 x 3mm 8-lead MCLP package thermal contact to the PCB. REV. A ECO-011187 MNA-4W+ RS/CP 211220 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 1 OF 5HIGH DIRECTIVITY Monolithic Amplifier MNA-4W+ 1 ELECTRICAL SPECIFICATIONS AT 25C Vs=5V Vs=2.8V Condition Parameter Units (GHz) Min. Typ. Max. Typ. Frequency Range 0.5 4.5 0.5-4.5 GHz 0.5 16.0 14.2 dB 1.0 17.8 15.4 2.0 16.0 17.8 19.6 14.9 Gain 2.5 17.0 14.2 3.5 13.9 11.6 4.5 8.8 9.8 11.7 8.1 dB 0.5 5.2 5.5 1.0 14.6 14.5 2.0 31.1 26.9 Input Return Loss 2.5 29.8 30.4 3.5 15.6 15.4 4.5 7.8 8.0 0.5 12.9 12.1 dB 1.0 25.9 12.7 2.0 15.6 11.2 Output Return Loss 2.5 15.0 11.3 3.5 17.7 12.6 4.5 16.7 11.8 0.5 18.7 10.7 dBm 1.0 18.6 11.8 2.0 17.2 12.0 Output Power at P1dB 2.5 16.8 12.1 3.5 15.2 11.9 4.5 13.5 10.8 0.5 30.9 22.8 dBm 1.0 30.8 23.5 2.0 28.5 23.4 Output IP3 2.5 27.9 23.2 3.5 26.3 22.4 4.5 25.0 21.3 0.5 4.9 5.0 dB 1.0 4.4 4.5 2.0 4.5 4.6 Noise Figure (dB) 2.5 4.5 4.6 3.5 4.7 4.9 4.5 5.5 5.8 0.5 31.8 35.3 dB 1.0 26.2 26.2 Directivity 2.0 19.4 20.5 (Isolation-Gain) 2.5 19.0 19.7 3.5 20.8 20.7 4.5 23.9 23.5 DC Current 75.1 94.0 70.6 mA Device Current Variation vs. Temperature(2) 35 17 A/C (3) (4) Device Current Variation vs Voltage 0.001 0.003 mA/mV Thermal resistance at 85C (Junction to Lead) 50 50 C/W (1) Measured on Mini-Circuits Characterization test board TB-186+. See Characterization Test Circuit (Fig. 1) (2) (Current at 85C -Current at -45C)/130 (3) (Current at 5.25V-Current at 3.9V)/1.35 (4) (Current at 3.9V-Current at 2.66V)/1.24 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 2 OF 5

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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