2SD882 MSKSEMI

2SD882 electronic component of MSKSEMI
2SD882 MSKSEMI
2SD882 Bipolar Transistors - BJT
2SD882  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SD882 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD882 Bipolar Transistors - BJT are a product manufactured by MSKSEMI. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SD882
Manufacturer: MSKSEMI
Category: Bipolar Transistors - BJT
Description: TO-252 Bipolar Transistors - BJT ROHS
Datasheet: 2SD882 Datasheet (PDF)
Price (USD)
5: USD 0.1946 ea
Line Total: USD 0.97 
Availability : 22465
  
Ship by Tue. 25 Nov to Mon. 01 Dec
QtyUnit Price
5$ 0.1946
50$ 0.1578
150$ 0.1046
500$ 0.0848
2500$ 0.068
5000$ 0.0643

Availability 22465
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1946
50$ 0.1578
150$ 0.1046
500$ 0.0848
2500$ 0.068
5000$ 0.0643

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the 2SD882 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD882 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SD882 is a TO-252 ROHS manufactured bipolar transistor made by MSKSEMI. It is a NPN-type transistor in a plastic package with three pins for base, collector and emitter connections. Features of this transistor include a collector-emitter voltage of 600 V, a base-emitter voltage of 6V, and a current gain of 200. Its continuous collector current is 3A and its continuous base current is 200mA. It is designed for use in medium power switching applications, such as electrical overload protection circuits, inverter control, and motor control circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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